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Results: 1-19 |
Results: 19
HETEROEPITAXY OF ZNO ON GAN AND ITS IMPLICATIONS FOR FABRICATION OF HYBRID OPTOELECTRONIC DEVICES
Authors: VISPUTE RD TALYANSKY V CHOOPUN S SHARMA RP VENKATESAN T HE M TANG X HALPERN JB SPENCER MG LI YX SALAMANCARIBA LG ILIADIS AA JONES KA
Citation: Rd. Vispute et al., HETEROEPITAXY OF ZNO ON GAN AND ITS IMPLICATIONS FOR FABRICATION OF HYBRID OPTOELECTRONIC DEVICES, Applied physics letters, 73(3), 1998, pp. 348-350
NEAR-BAND-EDGE TRANSITION IN ALUMINUM NITRIDE THIN-FILMS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: TANG X HOSSAIN F WONGCHOTIGUL K SPENCER MG
Citation: X. Tang et al., NEAR-BAND-EDGE TRANSITION IN ALUMINUM NITRIDE THIN-FILMS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 72(12), 1998, pp. 1501-1503
AN INVESTIGATION OF 3C-SIC PHOTOCONDUCTIVE POWER SWITCHING DEVICES
Authors: SHENG SP SPENCER MG TANG X ZHOU PZ WONGCHOTIGUL K TAYLOR C HARRIS GL
Citation: Sp. Sheng et al., AN INVESTIGATION OF 3C-SIC PHOTOCONDUCTIVE POWER SWITCHING DEVICES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 147-151
POLYCRYSTALLINE CUBIC SILICON-CARBIDE PHOTOCONDUCTIVE SWITCH
Authors: SHENG SP SPENCER MG TANG X ZHOU PZ HARRIS GL
Citation: Sp. Sheng et al., POLYCRYSTALLINE CUBIC SILICON-CARBIDE PHOTOCONDUCTIVE SWITCH, IEEE electron device letters, 18(8), 1997, pp. 372-374
IMPROVEMENT IN THE GROWTH-RATE OF CUBIC SILICON-CARBIDE BULK SINGLE-CRYSTALS GROWN BY THE SUBLIMATION METHOD
Authors: JAYATIRTHA HN SPENCER MG TAYLOR C GREG W
Citation: Hn. Jayatirtha et al., IMPROVEMENT IN THE GROWTH-RATE OF CUBIC SILICON-CARBIDE BULK SINGLE-CRYSTALS GROWN BY THE SUBLIMATION METHOD, Journal of crystal growth, 174(1-4), 1997, pp. 662-668
INVESTIGATION OF ALUMINUM NITRIDE GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION ON SILICON
Authors: ZETTERLING CM OSTLING M WONGCHOTIGUL K SPENCER MG TANG X HARRIS CI NORDELL N WONG SS
Citation: Cm. Zetterling et al., INVESTIGATION OF ALUMINUM NITRIDE GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION ON SILICON, Journal of applied physics, 82(6), 1997, pp. 2990-2995
DISPERSION PROPERTIES OF ALUMINUM NITRIDE AS MEASURED BY AN OPTICAL WAVE-GUIDE TECHNIQUE
Authors: TANG X YUAN YF WONGCHOTIGUL K SPENCER MG
Citation: X. Tang et al., DISPERSION PROPERTIES OF ALUMINUM NITRIDE AS MEASURED BY AN OPTICAL WAVE-GUIDE TECHNIQUE, Applied physics letters, 70(24), 1997, pp. 3206-3208
THE PROVISION OF A PALLIATIVE CARE SERVICE IN A TEACHING HOSPITAL ANDSUBSEQUENT EVALUATION OF THAT SERVICE
Authors: MCQUILLAN R FINLAY I ROBERTS D BRANCH C FORBES K SPENCER MG
Citation: R. Mcquillan et al., THE PROVISION OF A PALLIATIVE CARE SERVICE IN A TEACHING HOSPITAL ANDSUBSEQUENT EVALUATION OF THAT SERVICE, Palliative medicine, 10(3), 1996, pp. 231-239
LOW-RESISTIVITY ALUMINUM NITRIDE - CARBON (ALN-C) FILMS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: WONGCHOTIGUL K CHEN N ZHANG DP TANG X SPENCER MG
Citation: K. Wongchotigul et al., LOW-RESISTIVITY ALUMINUM NITRIDE - CARBON (ALN-C) FILMS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Materials letters, 26(4-5), 1996, pp. 223-226
LOW-RESISTIVITY AS-DEPOSITED OHMIC CONTACTS TO 3C-SIC
Authors: MOKI A SHENOY P ALOK D BALIGA BJ WONGCHOTIGUL K SPENCER MG
Citation: A. Moki et al., LOW-RESISTIVITY AS-DEPOSITED OHMIC CONTACTS TO 3C-SIC, Journal of electronic materials, 24(4), 1995, pp. 315-318
FOREIGN-EXCHANGE HEDGING AND THE INTEREST-RATE DEFENSE
Authors: GARBER PM SPENCER MG
Citation: Pm. Garber et Mg. Spencer, FOREIGN-EXCHANGE HEDGING AND THE INTEREST-RATE DEFENSE, Staff papers - International Monetary Fund, 42(3), 1995, pp. 490-516
CRYSTAL-STRUCTURE OF (SIC)(X)(ALN)(1-X) GROWN ON 6H-SIC BY MOCVD
Authors: WONGCHOTIGUL K SPENCER MG CHEN N PRASAD BD
Citation: K. Wongchotigul et al., CRYSTAL-STRUCTURE OF (SIC)(X)(ALN)(1-X) GROWN ON 6H-SIC BY MOCVD, Materials letters, 21(5-6), 1994, pp. 381-385
IDENTIFICATION OF THE NEUTRAL V4-SIC BY ELECTRON-SPIN-RESONANCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE( IMPURITY IN CUBIC 3C)
Authors: DOMBROWSKI KF KAUFMANN U KUNZER M MAIER K SCHNEIDER J SHIELDS VB SPENCER MG
Citation: Kf. Dombrowski et al., IDENTIFICATION OF THE NEUTRAL V4-SIC BY ELECTRON-SPIN-RESONANCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE( IMPURITY IN CUBIC 3C), Physical review. B, Condensed matter, 50(24), 1994, pp. 18034-18039
ASSOCIATION OF A ZERO-BIAS ANOMALY IN ELECTRON-TUNNELING IN ALXGA1-XAS WITH THE DX DEFECT
Authors: MAGNO R SPENCER MG
Citation: R. Magno et Mg. Spencer, ASSOCIATION OF A ZERO-BIAS ANOMALY IN ELECTRON-TUNNELING IN ALXGA1-XAS WITH THE DX DEFECT, Physical review. B, Condensed matter, 50(16), 1994, pp. 12238-12241
DEFECT ASSISTED TUNNELING IN GAAS ALGAAS/GAAS HETEROSTRUCTURES/
Authors: MAGNO R SPENCER MG
Citation: R. Magno et Mg. Spencer, DEFECT ASSISTED TUNNELING IN GAAS ALGAAS/GAAS HETEROSTRUCTURES/, Journal of applied physics, 75(1), 1994, pp. 368-372
DEEP DONOR STATE OF VANADIUM IN CUBIC SILICON-CARBIDE (3C-SIC)
Authors: DOMBROWSKI KF KAUFMANN U KUNZER M MAIER K SCHNEIDER J SHIELDS VB SPENCER MG
Citation: Kf. Dombrowski et al., DEEP DONOR STATE OF VANADIUM IN CUBIC SILICON-CARBIDE (3C-SIC), Applied physics letters, 65(14), 1994, pp. 1811-1813
IS THERE A NEED FOR IMPROVED PHARMACY SERVICES TO THE OPERATING-THEATER
Authors: BRANCH CE BOWDEN S ROBERTS DE SPENCER MG LUSCOMBE DK
Citation: Ce. Branch et al., IS THERE A NEED FOR IMPROVED PHARMACY SERVICES TO THE OPERATING-THEATER, Journal of clinical pharmacy and therapeutics, 18(3), 1993, pp. 179-182
NEAR-EQUILIBRIUM GROWTH OF THICK, HIGH-QUALITY BETA-SIC BY SUBLIMATION
Authors: SHIELDS VB FEKADE K SPENCER MG
Citation: Vb. Shields et al., NEAR-EQUILIBRIUM GROWTH OF THICK, HIGH-QUALITY BETA-SIC BY SUBLIMATION, Applied physics letters, 62(16), 1993, pp. 1919-1921
VIABILITY OF CHONDROPLASTIC GRAFT
Authors: SPENCER MG MACKAY AM
Citation: Mg. Spencer et Am. Mackay, VIABILITY OF CHONDROPLASTIC GRAFT, Journal of Laryngology and Otology, 106(2), 1992, pp. 166-167
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