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Results: 1-9 |
Results: 9
SURFACE-STATE CONTRIBUTION TO THE OPTICAL ANISOTROPY OF AG(110) SURFACES - A REFLECTANCE-ANISOTROPY-SPECTROSCOPY AND PHOTOEMISSION-STUDY
Authors: STAHRENBERG K HERRMANN T ESSER N SAHM J RICHTER W HOFFMANN SV HOFMANN P
Citation: K. Stahrenberg et al., SURFACE-STATE CONTRIBUTION TO THE OPTICAL ANISOTROPY OF AG(110) SURFACES - A REFLECTANCE-ANISOTROPY-SPECTROSCOPY AND PHOTOEMISSION-STUDY, Physical review. B, Condensed matter, 58(16), 1998, pp. 10207-10209
STUDY OF CLEAN AND OXYGEN-COVERED AG SURFACES USING OPTICAL REFLECTANCE ANISOTROPY
Authors: FERNANDEZ V PAHLKE D ESSER N STAHRENBERG K HUNDERI O BRADSHAW AM RICHTER W
Citation: V. Fernandez et al., STUDY OF CLEAN AND OXYGEN-COVERED AG SURFACES USING OPTICAL REFLECTANCE ANISOTROPY, Surface science, 377(1-3), 1997, pp. 388-392
EVOLUTION OF SHORT-RANGE AND LONG-RANGE ORDER DURING SI INCORPORATIONON GAAS(001) OBSERVED BY RAS AND RHEED DURING MBE
Authors: DAWERITZ L STAHRENBERG K SCHUTZENDUBE P ZETTLER JT RICHTER W PLOOG KH
Citation: L. Daweritz et al., EVOLUTION OF SHORT-RANGE AND LONG-RANGE ORDER DURING SI INCORPORATIONON GAAS(001) OBSERVED BY RAS AND RHEED DURING MBE, Journal of crystal growth, 175, 1997, pp. 310-316
MOLECULAR-BEAM EPITAXY-GROWN ZNSE STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
Authors: ZETTLER JT STAHRENBERG K RICHTER W WENISCH H JOBST B HOMMEL D
Citation: Jt. Zettler et al., MOLECULAR-BEAM EPITAXY-GROWN ZNSE STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2757-2760
TAILORING OF SI DOPING LAYERS IN GAAS DURING MOLECULAR-BEAM EPITAXY
Authors: DAWERITZ L KOSTIAL H RAMSTEINER M KLANN R SCHUTZENDUBE P STAHRENBERG K BEHREND J HEY R MAIER M PLOOG K
Citation: L. Daweritz et al., TAILORING OF SI DOPING LAYERS IN GAAS DURING MOLECULAR-BEAM EPITAXY, Physica status solidi. b, Basic research, 194(1), 1996, pp. 127-144
IN-SITU SPECTROSCOPIC ELLIPSOMETRY AND REFLECTANCE DIFFERENCE SPECTROSCOPY OF GAAS(001) SURFACE RECONSTRUCTIONS
Authors: WASSERMEIER M BEHREND J ZETTLER JT STAHRENBERG K PLOOG KH
Citation: M. Wassermeier et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY AND REFLECTANCE DIFFERENCE SPECTROSCOPY OF GAAS(001) SURFACE RECONSTRUCTIONS, Applied surface science, 107, 1996, pp. 48-52
IN-SITU SPECTROSCOPIC ELLIPSOMETRY OF GAAS(001) SURFACE RECONSTRUCTIONS
Authors: WASSERMEIER M BEHREND J PLOOG KH ZETTLER JT STAHRENBERG K RICHTER W
Citation: M. Wassermeier et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY OF GAAS(001) SURFACE RECONSTRUCTIONS, Physical review. B, Condensed matter, 53(20), 1996, pp. 13542-13546
SURFACE PROCESSES RESPONSIBLE FOR REFLECTANCE-ANISOTROPY OSCILLATIONSDURING MOLECULAR-BEAM EPITAXY GROWTH OF GAAS(001)
Authors: RUMBERG J ZETTLER JT STAHRENBERG K PLOSKA K RICHTER W DAWERITZ L SCHUTZENDUBE P WASSERMEIER M
Citation: J. Rumberg et al., SURFACE PROCESSES RESPONSIBLE FOR REFLECTANCE-ANISOTROPY OSCILLATIONSDURING MOLECULAR-BEAM EPITAXY GROWTH OF GAAS(001), Surface science, 337(1-2), 1995, pp. 103-108
REFLECTANCE ANISOTROPY OSCILLATIONS DURING MOCVD AND MBE GROWTH OF GAAS(001)
Authors: ZETTLER JT RUMBERG J PLOSKA K STAHRENBERG K PRISTOVSEK M RICHTER W WASSERMEIER M SCHUTZENDUBE P BEHREND J DAWERITZ L
Citation: Jt. Zettler et al., REFLECTANCE ANISOTROPY OSCILLATIONS DURING MOCVD AND MBE GROWTH OF GAAS(001), Physica status solidi. a, Applied research, 152(1), 1995, pp. 35-47
Risultati: 1-9 |