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Results:
1-18
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Results: 18
Authors:
CHOW DH
HAFIZI M
STANCHINA WE
ROTH JA
ZINCK JJ
DUBRAY JJ
DUNLAP HL
Citation: Dh. Chow et al., MONOLITHIC INTEGRATION OF RESONANT-TUNNELING DIODES AND HETEROJUNCTION BIPOLAR-TRANSISTORS ON PATTERNED INP SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1413-1416
Authors:
DATTA S
SHI S
ROENKER KP
CAHAY MM
STANCHINA WE
Citation: S. Datta et al., SIMULATION AND DESIGN OF INALAS INGAAS PNP HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1634-1643
Authors:
MOKHTARI M
SWAHN T
WALDEN RH
STANCHINA WE
KARDOS M
JUHOLA T
SCHUPPENER G
TENHUNEN H
LEWIN T
Citation: M. Mokhtari et al., INP-HBT CHIP-SET FOR 40-GB S FIBER OPTICAL COMMUNICATION-SYSTEMS OPERATIONAL AT 3 V/, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1371-1383
Authors:
KIZILOGLU K
YUNG MW
SUN HC
THOMAS S
KARDOS MB
WALDEN RH
BROWN JJ
STANCHINA WE
Citation: K. Kiziloglu et al., INP-BASED MIXED DEVICE (HEMT HBT) TECHNOLOGY ON PLANAR SUBSTRATE FOR HIGH-PERFORMANCE MIXED-SIGNAL AND OPTOELECTRONIC CIRCUITS/, Electronics Letters, 33(24), 1997, pp. 2065-2066
Authors:
SHI S
ROENKER KP
KUMAR T
CAHAY MM
STANCHINA WE
Citation: S. Shi et al., SIMULATION OF PNP INALAS INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1466-1467
Authors:
KUMAR T
CAHAY M
SHI S
ROENKER K
STANCHINA WE
Citation: T. Kumar et al., A HYBRID MODEL TO CALCULATE THE FORWARD DELAY-TIME OF HETEROJUNCTION BIPOLAR-TRANSISTORS, Superlattices and microstructures, 18(1), 1995, pp. 1-8
Authors:
SHI S
ROENKER KP
KUMAR T
CAHAY MM
STANCHINA WE
Citation: S. Shi et al., SIMULATION STUDY OF INP-BASED PNP HETEROJUNCTION BIPOLAR-TRANSISTORS AND INCORPORATION OF NONCLASSICAL EFFECTS, Superlattices and microstructures, 18(1), 1995, pp. 9-19
Authors:
CONKLIN T
NAUGLE S
SHI S
FRIMEL SM
ROENKER KP
KUMAR T
CAHAY MM
STANCHINA WE
Citation: T. Conklin et al., INCLUSION OF TUNNELING AND BALLISTIC TRANSPORT EFFECTS IN AN ANALYTICAL APPROACH TO MODELING OF NPN INP-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS, Superlattices and microstructures, 18(1), 1995, pp. 21-32
Authors:
KUMAR T
CAHAY M
SHI S
ROENKER K
STANCHINA WE
Citation: T. Kumar et al., LIMIT OF VALIDITY OF THE THERMIONIC-FIELD-EMISSION TREATMENT OF ELECTRON INJECTION ACROSS EMITTER-BASE JUNCTIONS IN ABRUPT HETEROJUNCTION BIPOLAR-TRANSISTORS, Journal of applied physics, 77(11), 1995, pp. 5786-5792
Authors:
HAFIZI M
STANCHINA WE
WILLIAMS F
JENSEN JF
Citation: M. Hafizi et al., RELIABILITY OF INP-BASED HBT IC TECHNOLOGY FOR HIGH-SPEED, LOW-POWER APPLICATIONS, IEEE transactions on microwave theory and techniques, 43(12), 1995, pp. 3048-3054
Authors:
COWLES J
GUTIERREZAITKEN AL
BHATTACHARYA P
HADDAD GI
NICHOLS D
DUTTA NK
STANCHINA WE
Citation: J. Cowles et al., 7.1-GHZ BANDWIDTH MONOLITHICALLY INTEGRATED IN0.53GA0.47AS IN0.52AL0.48AS PIN-HBT TRANSIMPEDANCE PHOTORECEIVER (VOL 6, PG 963, 1994)/, IEEE photonics technology letters, 6(11), 1994, pp. 1395-1395
Authors:
HAFIZI M
LIU T
STANCHINA WE
RENSCH DB
LUI M
BROWN YK
Citation: M. Hafizi et al., IMPORTANCE OF COLLECTOR DOPING IN THE DESIGN OF ALINAS GAINAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, Applied physics letters, 64(24), 1994, pp. 3261-3263
Authors:
HAFIZI M
METZGER RA
STANCHINA WE
Citation: M. Hafizi et al., DEPENDENCE OF DC CURRENT GAIN AND FMAX OF ALINAS GAINAS HBTS ON BASE SHEET RESISTANCE/, IEEE electron device letters, 14(7), 1993, pp. 323-325
Authors:
HAFIZI M
STANCHINA WE
METZGER RA
MACDONALD PA
WILLIAMS F
Citation: M. Hafizi et al., TEMPERATURE-DEPENDENCE OF DC AND RF CHARACTERISTICS OF ALINAS GAINAS HBTS/, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1583-1588
Authors:
HAFIZI M
STANCHINA WE
METZGER RA
JENSEN JF
WILLIAMS F
Citation: M. Hafizi et al., RELIABILITY OF ALINAS GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2178-2185
Authors:
HAFIZI H
LIU T
RENSCH DB
STANCHINA WE
Citation: H. Hafizi et al., EFFECTS OF COLLECTOR DOPING ON DC AND RF PERFORMANCE OF ALINAS GAINAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2122-2123
Authors:
METZGER RA
HAFIZI M
STANCHINA WE
LIU T
WILSON RG
MCCRAY LG
Citation: Ra. Metzger et al., CONFINEMENT OF HIGH BE DOPING LEVELS IN ALINAS GAINAS NPN HETEROJUNCTION BIPOLAR-TRANSISTORS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH/, Applied physics letters, 63(10), 1993, pp. 1360-1362
Authors:
HAFIZI M
METZGER RA
STANCHINA WE
Citation: M. Hafizi et al., STABILITY OF BERYLLIUM-DOPED COMPOSITIONALLY GRADED AND ABRUPT ALINASGAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Applied physics letters, 63(1), 1993, pp. 93-95
Risultati:
1-18
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