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Results: 1-8 |
Results: 8
HYDROGEN PASSIVATION OF THE BE ACCEPTOR IN P-INP (100)
Authors: WILLIAMS MD CUNNINGHAM JE CHIU TH CHIEN M STORZ FG JAN W WALKER JA
Citation: Md. Williams et al., HYDROGEN PASSIVATION OF THE BE ACCEPTOR IN P-INP (100), Applied surface science, 136(1-2), 1998, pp. 111-116
IN SEGREGATION AT THE GROWTH FRONT OF THE GAAS IN0.30GA0.70AS (100) HETEROJUNCTION/
Authors: WILLIAMS MD CHIU TH STORZ FG
Citation: Md. Williams et al., IN SEGREGATION AT THE GROWTH FRONT OF THE GAAS IN0.30GA0.70AS (100) HETEROJUNCTION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 692-695
EFFECTS OF CATION DIFFUSION DURING CHEMICAL BEAM ETCHING
Authors: CHIU TH TSANG WT WILLIAMS MD MENDONCA CAC DREYER K STORZ FG
Citation: Th. Chiu et al., EFFECTS OF CATION DIFFUSION DURING CHEMICAL BEAM ETCHING, Journal of crystal growth, 150(1-4), 1995, pp. 546-550
CHEMICAL BEAM EPITAXIAL-GROWTH OF INGAAS USING A NEW PRECURSOR TRI-ISOPROPYLGALLIUM
Authors: CHIU TH WILLIAMS MD STORZ FG FERGUSON JF
Citation: Th. Chiu et al., CHEMICAL BEAM EPITAXIAL-GROWTH OF INGAAS USING A NEW PRECURSOR TRI-ISOPROPYLGALLIUM, Journal of crystal growth, 136(1-4), 1994, pp. 148-151
IMPURITY REMOVAL BY CHEMICAL BEAM ETCHING OF GAAS
Authors: MENDONCA CAC CHIU TH WILLIAMS MD STORZ FG
Citation: Cac. Mendonca et al., IMPURITY REMOVAL BY CHEMICAL BEAM ETCHING OF GAAS, Electronics Letters, 30(20), 1994, pp. 1717-1719
SURFACE CLEANING OF GAAS BY IN-SITU CHEMICAL BEAM ETCHING
Authors: CHIU TH TSANG WT WILLIAMS MD MENDONCA CAC DREYER K STORZ FG
Citation: Th. Chiu et al., SURFACE CLEANING OF GAAS BY IN-SITU CHEMICAL BEAM ETCHING, Applied physics letters, 65(26), 1994, pp. 3368-3370
SHALLOW P-TYPE OHMIC CONTACT TO GA0.47IN0.53AS USING AU TI/MN/W/
Authors: CHANG TY HE Y SAUER NJ WESTERWICK EH STORZ FG WILLIAMS MD
Citation: Ty. Chang et al., SHALLOW P-TYPE OHMIC CONTACT TO GA0.47IN0.53AS USING AU TI/MN/W/, Electronics Letters, 29(12), 1993, pp. 1139-1141
SECONDARY ION MASS-SPECTROMETRY OF INGAAS INP (100) MULTIPLE LAYERS GROWN BY CHEMICAL BEAM EPITAXY/
Authors: WILLIAMS MD CHIU TH STORZ FG SHUNK SC FERGUSON JF
Citation: Md. Williams et al., SECONDARY ION MASS-SPECTROMETRY OF INGAAS INP (100) MULTIPLE LAYERS GROWN BY CHEMICAL BEAM EPITAXY/, Applied physics letters, 62(16), 1993, pp. 1884-1886
Risultati: 1-8 |