Authors:
HOFLER A
FEUDEL T
STRECKER N
FICHTNER W
STEGEMANN KH
SYHRE H
DALLMANN G
Citation: A. Hofler et al., A TECHNOLOGY ORIENTED MODEL FOR TRANSIENT DIFFUSION AND ACTIVATION OFBORON IN SILICON, Journal of applied physics, 78(6), 1995, pp. 3671-3679
Citation: W. Merz et N. Strecker, THE OXIDATION PROCESS OF SILICON - MODELING AND MATHEMATICAL TREATMENT, Mathematical methods in the applied sciences, 17(15), 1994, pp. 1165-1191
Citation: M. Dammann et al., GROWTH AND SHRINKAGE OF SURFACE STACKING-FAULTS IN FLOAT-ZONE AND CZOCHRALSKI SILICON, Journal of applied physics, 76(8), 1994, pp. 4547-4552