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Results: 1-25/90
Authors:
TU RC
SU YK
HUANG YS
CHEN GS
CHOU ST
Citation: Rc. Tu et al., STRUCTURAL AND OPTICAL STUDIES OF ZNCDSE ZNSE/ZNMGSSE SEPARATE-CONFINEMENT HETEROSTRUCTURES WITH DIFFERENT BUFFER LAYERS/, JPN J A P 1, 37(9A), 1998, pp. 4732-4736
Authors:
SU SH
YOKOYAMA M
SU YK
Citation: Sh. Su et al., REACTIVE ION ETCHING OF ZNS FILMS USING A GAS-MIXTURE OF METHANE HYDROGEN/ARGON/, JPN J A P 1, 37(4A), 1998, pp. 1764-1767
Authors:
KUO CW
SU YK
KUAN H
Citation: Cw. Kuo et al., BCL3 AR PLASMA-INDUCED SURFACE DAMAGE IN GAINP/INGAAS/GAINP QUANTUM-WELL HIGH-ELECTRON-MOBILITY TRANSISTORS/, JPN J A P 2, 37(6B), 1998, pp. 706-708
Authors:
SHEU JK
SU YK
CHANG SJ
JOU MJ
LIU CC
CHI GC
Citation: Jk. Sheu et al., INVESTIGATION OF WAFER-BONDED (ALXGA1-X)(0.5)IN0.5P GAP LIGHT-EMITTING-DIODES/, IEE proceedings. Optoelectronics, 145(4), 1998, pp. 248-252
Authors:
GAN KJ
SU YK
Citation: Kj. Gan et Yk. Su, NOVEL MULTIPEAK CURRENT-VOLTAGE CHARACTERISTICS OF SERIES-CONNECTED NEGATIVE DIFFERENTIAL RESISTANCE DEVICES, IEEE electron device letters, 19(4), 1998, pp. 109-111
Authors:
JUANG YZ
SU YK
CHANG SJ
HUANG DF
CHANG SC
Citation: Yz. Juang et al., REACTIVE ION ETCHING FOR ALGAINP GAINP LASER STRUCTURES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2031-2036
Authors:
CHEN HJ
LIN DY
HUANG YS
TU RC
SU YK
TIONG KK
Citation: Hj. Chen et al., OPTICAL CHARACTERIZATION OF A ZN0.88MG0.12S0.18SE0.82 EPILAYER ON GAAS, Zhongguo wuli xuekan, 36(3), 1998, pp. 533-541
Authors:
LO I
CHEN SJ
LEE YC
TU LW
MITCHEL WC
AHOUJJA M
PERRIN RE
TU RC
SU YK
LAN WH
TU SL
Citation: I. Lo et al., NEGATIVE PERSISTENT PHOTOCONDUCTIVITY IN II-VI ZNS1-XSEX ZN1-YCDYSE QUANTUM-WELLS/, Physical review. B, Condensed matter, 57(12), 1998, pp. 6819-6822
Authors:
KUO CW
SU YK
LIN HH
TSIA CY
Citation: Cw. Kuo et al., STUDY AND APPLICATION OF REACTIVE ION ETCHING ON GAINP INGAAS/GAINP QUANTUM-WELL HEMTS/, Solid-state electronics, 42(11), 1998, pp. 1933-1937
Authors:
SHEU JK
SU YK
CHANG SJ
CHI GC
LIN KB
LIU CC
CHIU CC
Citation: Jk. Sheu et al., ELECTRICAL DERIVATIVE CHARACTERISTICS OF ION-IMPLANTED ALGAINP GAINP MULTIQUANTUM-WELL LASERS/, Solid-state electronics, 42(10), 1998, pp. 1867-1869
Authors:
LI WL
SU YK
CHANG SJ
CHANG CS
TSAI CY
Citation: Wl. Li et al., DESIGN OF ALGAINP VISIBLE LASERS WITH A LOW VERTICAL DIVERGENCE ANGLE, Solid-state electronics, 42(1), 1998, pp. 87-90
Authors:
GAN KJ
SU YK
WANG RL
Citation: Kj. Gan et al., SIMULATION AND ANALYSIS OF NEGATIVE DIFFERENTIAL RESISTANCE DEVICES AND CIRCUITS BY LOAD-LINE METHOD AND PSPICE, Solid-state electronics, 42(1), 1998, pp. 176-180
Authors:
SHEU JK
SU YK
CHI GC
PONG BJ
CHEN CY
HUANG CN
CHEN WC
Citation: Jk. Sheu et al., PHOTOLUMINESCENCE SPECTROSCOPY OF MG-DOPED GAN, Journal of applied physics, 84(8), 1998, pp. 4590-4594
Authors:
TU RC
SU YK
CHEN HJ
HUANG YS
CHOU ST
Citation: Rc. Tu et al., THE STRUCTURAL AND OPTICAL-PROPERTIES OF HIGH-QUALITY ZNTE GROWN ON GAAS USING ZNSE ZNTE STRAINED SUPERLATTICES BUFFER LAYER/, Journal of applied physics, 84(5), 1998, pp. 2866-2870
Authors:
CHOU WC
YANG CS
CHU AHM
YEH AJ
RO CS
LAN WH
TU SL
TU RC
CHOU SC
SU YK
Citation: Wc. Chou et al., OPTICAL-PROPERTIES OF ZNSE1-XSX EPILAYERS GROWN ON MISORIENTED GAAS SUBSTRATES, Journal of applied physics, 84(4), 1998, pp. 2245-2250
Authors:
TU RC
SU YK
HUANG YS
CHOU ST
Citation: Rc. Tu et al., THE ANNEALING EFFECTS ON ZNCDSE ZNSE QUANTUM-WELLS AND ZNSE/GAAS INTERFACES/, Journal of applied physics, 84(11), 1998, pp. 6017-6022
Authors:
SHEU JK
SU YK
CHI GC
CHEN WC
CHEN CY
HUANG CN
HONG JM
YU YC
WANG CW
LIN EK
Citation: Jk. Sheu et al., THE EFFECT OF THERMAL ANNEALING ON THE NI AU CONTACT OF P-TYPE GAN/, Journal of applied physics, 83(6), 1998, pp. 3172-3175
Authors:
TU RC
SU YK
LI CF
HUANG YS
CHOU ST
LAN WH
TU SL
CHANG H
Citation: Rc. Tu et al., NEAR-BAND-EDGE OPTICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY-GROWN ZNSE EPILAYERS ON GAAS BY MODULATION SPECTROSCOPY, Journal of applied physics, 83(3), 1998, pp. 1664-1669
Authors:
TU RC
SU YK
LIN DY
HUANG YS
LAN WH
TU SL
CHANG SJ
CHOU SC
CHOU WC
Citation: Rc. Tu et al., CONTACTLESS ELECTROREFLECTANCE STUDY OF STRAINED ZN0.79CD0.21SE ZNSE DOUBLE-QUANTUM WELLS/, Journal of applied physics, 83(2), 1998, pp. 1043-1048
Authors:
WANG CW
LIAO JY
SU YK
YOKOYAMA M
Citation: Cw. Wang et al., THE RELATION BETWEEN LUMINOUS PROPERTIES AND OXYGEN-CONTENT IN ZNS-TBOF THIN-FILM ELECTROLUMINESCENT DEVICES FABRICATED BY RADIOFREQUENCY MAGNETRON SPUTTERING METHOD, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 757-762
Authors:
SU YK
LI WL
CHANG SJ
CHANG CS
TSAI CY
Citation: Yk. Su et al., HIGH-PERFORMANCE 670-NM ALGAINP GAINP VISIBLE STRAINED-QUANTUM-WELL LASERS/, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 763-767
Authors:
CHANG CS
SU YK
CHANG SJ
CHANG PT
WU YR
HUANG KH
CHEN TP
Citation: Cs. Chang et al., HIGH-BRIGHTNESS ALGAINP 573-NM LIGHT-EMITTING DIODE WITH A CHIRPED MULTIQUANTUM BARRIER, IEEE journal of quantum electronics, 34(1), 1998, pp. 77-83
Authors:
SHEU JK
SU YK
CHI GC
JOU MJ
CHANG CM
Citation: Jk. Sheu et al., EFFECTS OF THERMAL ANNEALING ON THE INDIUM TIN OXIDE SCHOTTKY CONTACTS OF N-GAN, Applied physics letters, 72(25), 1998, pp. 3317-3319
Authors:
TU RC
SU YK
CHEN HJ
HUANG YS
CHOU ST
Citation: Rc. Tu et al., CONTACTLESS ELECTROREFLECTANCE AND PIEZOREFLECTANCE STUDIES OF TEMPERATURE-DEPENDENT STRAIN IN ZNTE GAAS HETEROSTRUCTURES WITH ZNSE/ZNTE SUPERLATTICE BUFFER LAYERS/, Applied physics letters, 72(24), 1998, pp. 3184-3186
Authors:
WANG CW
SHEU TJ
SU YK
YOKOYAMA M
Citation: Cw. Wang et al., DEEP TRAPS AND MECHANISM OF BRIGHTNESS DEGRADATION IN MN-DOPED ZNS THIN-FILM ELECTROLUMINESCENT DEVICES GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 36(5A), 1997, pp. 2728-2732