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Results: 1-8 |
Results: 8
ANNEALING KINETICS OF HYDROGENATED AS ACCEPTORS IN MOVPE GROWN CDTE
Authors: SVOB L MARFAING Y CLERJAUD B COTE D LEBKIRI A DRUILHE R LUSSON A GRATTEPAIN C
Citation: L. Svob et al., ANNEALING KINETICS OF HYDROGENATED AS ACCEPTORS IN MOVPE GROWN CDTE, Semiconductor science and technology, 13(1), 1998, pp. 79-85
CRYSTALLOGRAPHIC ORIENTATION DEPENDENCE OF AS INCORPORATION IN MOVPE-GROWN CDTE AND CORRESPONDING ACCEPTOR ELECTRICAL STATE ACTIVATION
Authors: SVOB L CHEZE I LUSSON A BALLUTAUD D ROMMELUERE JF MARFAING Y
Citation: L. Svob et al., CRYSTALLOGRAPHIC ORIENTATION DEPENDENCE OF AS INCORPORATION IN MOVPE-GROWN CDTE AND CORRESPONDING ACCEPTOR ELECTRICAL STATE ACTIVATION, Journal of crystal growth, 185, 1998, pp. 459-464
HYDROGEN-ARSENIC INTERACTIONS IN MOVPE-GROWN CDTE - EFFECTS OF RAPID THERMAL ANNEALING
Authors: SVOB L MARFAING Y CLERJAUD B COTE D LEBKIRI A DRUILHE R
Citation: L. Svob et al., HYDROGEN-ARSENIC INTERACTIONS IN MOVPE-GROWN CDTE - EFFECTS OF RAPID THERMAL ANNEALING, Journal of crystal growth, 159(1-4), 1996, pp. 72-75
TRANSPORT-PROPERTIES OF HYDROGENATED P-GAINAS DOPED WITH CARBON
Authors: THEYS B BOURGEOIS F CHEVALLIER J SVOB L MILOCHE M DRIAD R BENCHIMOL JL
Citation: B. Theys et al., TRANSPORT-PROPERTIES OF HYDROGENATED P-GAINAS DOPED WITH CARBON, Journal of applied physics, 80(4), 1996, pp. 2300-2304
REACTIVITY OF III-V AND II-VI SEMICONDUCTORS TOWARD HYDROGEN - SURFACE MODIFICATION AND EVOLUTION IN AIR
Authors: BALLUTAUD D DEBIEMMECHOUVY C ETCHEBERRY A DEMIERRY P SVOB L
Citation: D. Ballutaud et al., REACTIVITY OF III-V AND II-VI SEMICONDUCTORS TOWARD HYDROGEN - SURFACE MODIFICATION AND EVOLUTION IN AIR, Applied surface science, 84(2), 1995, pp. 187-192
CARBON AND HYDROGEN INCORPORATION IN ZNTE LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: DUMONT H SVOB L BALLUTAUD D GOROCHOV O
Citation: H. Dumont et al., CARBON AND HYDROGEN INCORPORATION IN ZNTE LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 23(2), 1994, pp. 239-242
INVESTIGATION OF HYDROGEN, CARBON AND FURTHER IMPURITIES IN THE METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE WITH DITERTIARYBUTYLSELENIDE AND METHYLALLYLSELENIDE
Authors: KUHN WS DRIAD R STANZL H LUSSON A WOLF K QUHEN B SAHIN H SVOB L GRATTEPAIN C QUESADA X GEBHARDT W GOROCHOV O
Citation: Ws. Kuhn et al., INVESTIGATION OF HYDROGEN, CARBON AND FURTHER IMPURITIES IN THE METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE WITH DITERTIARYBUTYLSELENIDE AND METHYLALLYLSELENIDE, Journal of crystal growth, 138(1-4), 1994, pp. 448-454
GROWTH OF MGTE AND ZN1-XMGXTE THIN-FILMS BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: QUHEN B QUESADA X KUHN WS BOUREE JE SVOB L LUSSON A GOROCHOV O
Citation: B. Quhen et al., GROWTH OF MGTE AND ZN1-XMGXTE THIN-FILMS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 138(1-4), 1994, pp. 1079-1080
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