Citation: A. Hadjadj et al., Fowler-Nordheim conduction in polysilicon (n(+))-oxide-silicon (p) structures: Limit of the classical treatment in the barrier height determination, J APPL PHYS, 89(12), 2001, pp. 7994-8001
Citation: G. Salace et al., The image force effect on the barrier height in MOS structures: correlation of the corrected barrier height with temperature and the oxide thickness, MICROEL REL, 40(4-5), 2000, pp. 763-766
Authors:
Salace, G
Hadjadj, A
Petit, C
Jourdain, M
Citation: G. Salace et al., Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n(+))-oxide-silicon (p) structures: Effect of the oxide thickness, J APPL PHYS, 85(11), 1999, pp. 7768-7773