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Results: 1-20 |
Results: 20

Authors: Lazzarini, L Salviati, G Franchi, S Napolitani, E
Citation: L. Lazzarini et al., A TEM and SEM-cathodoluminescence study of oval defects in graded InGaAs/GaAs buffer layers, MAT SCI E B, 80(1-3), 2001, pp. 120-124

Authors: Salviati, G Armani, N Cova, P Meneghesso, G Zanoni, E
Citation: G. Salviati et al., Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP-based HEMTs, MAT SCI E B, 80(1-3), 2001, pp. 289-293

Authors: Fornari, R Bosi, M Armani, N Attolini, G Ferrari, C Pelosi, C Salviati, G
Citation: R. Fornari et al., Hydride vapour phase epitaxy growth and characterisation of GaN layers, MAT SCI E B, 79(2), 2001, pp. 159-164

Authors: Taddei, S Colocci, M Vinattieri, A Gucciardi, PG Bogani, F Franchi, S Frigeri, P Lazzarini, L Salviati, G
Citation: S. Taddei et al., Vertical coupling effects in arrays of InAs quantum dots, PHYS ST S-B, 224(2), 2001, pp. 413-417

Authors: Geddo, M Ferrini, R Guizzetti, G Patrini, M Franchi, S Frigeri, P Salviati, G Lazzarini, L
Citation: M. Geddo et al., Photoreflectance characterization of InAs/GaAs self-assembled quantum dotsgrown by ALMBE, EUR PHY J B, 16(1), 2000, pp. 19-24

Authors: Salviati, G Armani, N Zanotti-Fregonara, C Gombia, E Albrecht, MG Strunk, HP Mayer, M Kamp, M Gasparotto, A
Citation: G. Salviati et al., Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire, MRS I J N S, 5, 2000, pp. NIL_647-NIL_654

Authors: Natali, M De Salvador, D Berti, M Drigo, AV Lazzarini, L Salviati, G Rossetto, G Torzo, G
Citation: M. Natali et al., Crack formation in tensile InGaAs/InP layers, J VAC SCI B, 18(5), 2000, pp. 2527-2533

Authors: Lazzarini, L Nasi, L Salviati, G Fregonara, CZ Li, Y Giling, LJ Hardingham, C Holt, DB
Citation: L. Lazzarini et al., Antiphase disorder in GaAs/Ge heterostructures for solar cells, MICRON, 31(3), 2000, pp. 217-222

Authors: Fregonara, CZ Salviati, G Borgarino, M Lazzarini, L Fantini, F
Citation: Cz. Fregonara et al., Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices, MICRON, 31(3), 2000, pp. 269-275

Authors: Taddei, S Colocci, M Vinattieri, A Bogani, F Franchi, S Frigeri, P Lazzarini, L Salviati, G
Citation: S. Taddei et al., Vertical coupling and transition energies in multilayer InAs/GaAs quantum-dot structures, PHYS REV B, 62(15), 2000, pp. 10220-10225

Authors: Sanguinetti, S Padovani, M Gurioli, M Grilli, E Guzzi, M Vinattieri, A Colocci, M Frigeri, P Franchi, S Lazzarini, L Salviati, G
Citation: S. Sanguinetti et al., Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures, THIN SOL FI, 380(1-2), 2000, pp. 224-226

Authors: Salviati, G Albrecht, M Zanotti-Fregonara, C Armani, N Mayer, M Shreter, Y Guzzi, M Melnik, YV Vassilevski, K Dmitriev, VA Strunk, HP
Citation: G. Salviati et al., Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN, PHYS ST S-A, 171(1), 1999, pp. 325-339

Authors: Cavallini, A Fraboni, B Binetti, S Pizzini, S Lazzarini, L Salviati, G
Citation: A. Cavallini et al., On the influence of dislocations on the luminescence of Si : Er, PHYS ST S-A, 171(1), 1999, pp. 347-351

Authors: Cova, P Meneghesso, G Salviati, G Zanoni, E
Citation: P. Cova et al., Cathodoluminescence from hot electron stressed InPHEMTs, MICROEL REL, 39(6-7), 1999, pp. 1073-1078

Authors: Betto, R Senter, L Ceoldo, S Tarricone, E Biral, D Salviati, G
Citation: R. Betto et al., Ecto-ATPase activity of alpha-sarcoglycan (adhalin), J BIOL CHEM, 274(12), 1999, pp. 7907-7912

Authors: Romanato, F Napolitani, E Carnera, A Drigo, AV Lazzarini, L Salviati, G Ferrari, C Bosacchi, A Franchi, S
Citation: F. Romanato et al., Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers, J APPL PHYS, 86(9), 1999, pp. 4748-4755

Authors: Cavallini, A Fraboni, B Pizzini, S Binetti, S Sanguinetti, S Lazzarini, L Salviati, G
Citation: A. Cavallini et al., Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy, J APPL PHYS, 85(3), 1999, pp. 1582-1586

Authors: Muller, BH Lantier, R Sorba, L Heun, S Rubini, S Lazzarino, M Franciosi, A Napolitani, E Romanato, F Drigo, AV Lazzarini, L Salviati, G
Citation: Bh. Muller et al., Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers, J APPL PHYS, 85(12), 1999, pp. 8160-8169

Authors: Biral, D Ballarin, F Toscano, I Salviati, G Yu, F Larsson, L Betto, R
Citation: D. Biral et al., Gender- and thyroid hormone-related transitions of essential myosin light chain isoform expression in rat soleus muscle during ageing, ACT PHYSL S, 167(4), 1999, pp. 317-323

Authors: Cavallini, A Fraboni, B Pizzini, S Binetti, S Lazzarini, L Salviati, G
Citation: A. Cavallini et al., Electrical and optical analyses of Er-doped silicon grown by liquid-phase epitaxy, J LUMINESC, 80(1-4), 1998, pp. 343-346
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