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Citation: G. Salviati et al., Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire, MRS I J N S, 5, 2000, pp. NIL_647-NIL_654
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Salviati, G
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Citation: Cz. Fregonara et al., Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices, MICRON, 31(3), 2000, pp. 269-275
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Citation: S. Taddei et al., Vertical coupling and transition energies in multilayer InAs/GaAs quantum-dot structures, PHYS REV B, 62(15), 2000, pp. 10220-10225
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Citation: G. Salviati et al., Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN, PHYS ST S-A, 171(1), 1999, pp. 325-339
Authors:
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Citation: A. Cavallini et al., Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy, J APPL PHYS, 85(3), 1999, pp. 1582-1586
Authors:
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Citation: D. Biral et al., Gender- and thyroid hormone-related transitions of essential myosin light chain isoform expression in rat soleus muscle during ageing, ACT PHYSL S, 167(4), 1999, pp. 317-323
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Citation: A. Cavallini et al., Electrical and optical analyses of Er-doped silicon grown by liquid-phase epitaxy, J LUMINESC, 80(1-4), 1998, pp. 343-346