Authors: Samavedam, SB Dip, A Phillips, AM Tobin, PJ Mihopolous, T Taylor, WJ Adetutu, O

Citation: Sb. Samavedam et al., Elevated source drain devices using silicon selective epitaxial growth, J VAC SCI B, 18(3), 2000, pp. 1244-1250

Authors: Samavedam, SB Taylor, WJ Grant, JM Smith, JA Tobin, PJ Dip, A Phillips, AM Liu, R

Citation: Sb. Samavedam et al., Relaxation of strained Si layers grown on SiGe buffers, J VAC SCI B, 17(4), 1999, pp. 1424-1429

Authors: Madhukar, S Aggarwal, S Dhote, AM Ramesh, R Samavedam, SB Choopun, S Sharma, RP

Citation: S. Madhukar et al., Pulsed laser-ablation deposition of thin films of molybdenum silicide and its properties as a conducting barrier for ferroelectric random-access memory technology, J MATER RES, 14(3), 1999, pp. 940-947

Authors: Fitzgerald, EA Currie, MT Samavedam, SB Langdo, TA Taraschi, G Yang, V Leitz, CW Bulsara, MT

Citation: Ea. Fitzgerald et al., Dislocations in relaxed SiGe/Si heterostructures, PHYS ST S-A, 171(1), 1999, pp. 227-238

Authors: Gribelyuk, MA Kittl, JA Samavedam, SB

Citation: Ma. Gribelyuk et al., Effect of Mo doping on accelerated growth of C-54TiSi(2): Evidence for template mechanism, J APPL PHYS, 86(5), 1999, pp. 2571-2575