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Results: 1-25/53
Authors:
Kimura, M
Inoue, S
Shimoda, T
Sameshima, T
Citation: M. Kimura et al., Device simulation of carrier transport through grain boundaries in lightlydoped polysilicon films and dependence on dopant density, JPN J A P 1, 40(9A), 2001, pp. 5237-5243
Authors:
Higashi, S
Sameshima, T
Citation: S. Higashi et T. Sameshima, Pulsed-laser-induced microcrystallization and amorphization of silicon thin films, JPN J A P 1, 40(2A), 2001, pp. 480-485
Authors:
Higashi, S
Ando, N
Kamisako, K
Sameshima, T
Citation: S. Higashi et al., Stress in pulsed-laser-crystallized silicon films, JPN J A P 1, 40(2A), 2001, pp. 731-735
Authors:
Kimura, M
Inoue, S
Shimoda, T
Sameshima, T
Citation: M. Kimura et al., Device simulation of grain boundaries in lightly doped polysilicon films and analysis of dependence on defect density, JPN J A P 1, 40(1), 2001, pp. 49-53
Authors:
Kimura, M
Inoue, S
Shimoda, T
Sameshima, T
Citation: M. Kimura et al., Current paths over grain boundaries in polycrystalline silicon films, JPN J A P 2, 40(2A), 2001, pp. L97-L99
Authors:
Yamanaka, H
Akimoto, M
Kanai, S
Sameshima, T
Arihara, K
Itoh, M
Citation: H. Yamanaka et al., Changes in microflora and chemical properties of pork loins cured with pickle, J JPN SOC F, 48(11), 2001, pp. 835-839
Authors:
Sameshima, T
Kaneko, Y
Andoh, N
Citation: T. Sameshima et al., Rapid crystallization of silicon films using Joule heating of metal films, APPL PHYS A, 73(4), 2001, pp. 419-423
Authors:
Watanabe, T
Sameshima, T
Ide, M
Citation: T. Watanabe et al., Etching of buried photoresist layers and its application to the formation of three-dimensional layered structures, APPL PHYS A, 73(4), 2001, pp. 429-432
Authors:
Kamiya, T
Suemasu, A
Watanabe, T
Sameshima, T
Shimizu, I
Citation: T. Kamiya et al., Improvement of transport properties for polycrystalline silicon prepared by plasma-enhanced chemical vapor deposition, APPL PHYS A, 73(2), 2001, pp. 151-159
Authors:
Ishigame, S
Ozaki, K
Sameshima, T
Higashi, S
Citation: S. Ishigame et al., Characterization of pulsed laser crystallization of silicon thin film, SOL EN MAT, 66(1-4), 2001, pp. 381-387
Authors:
Sameshima, T
Saitoh, K
Aoyama, N
Tanda, M
Kondo, M
Matsuda, A
Higashi, S
Citation: T. Sameshima et al., Analysis of free-carrier optical absorption used for characterization of microcrystalline silicon films, SOL EN MAT, 66(1-4), 2001, pp. 389-395
Authors:
Andoh, N
Kamisako, K
Sameshima, T
Saitoh, T
Citation: N. Andoh et al., Epitaxial growth of polycrystalline films formed by microwave plasma chemical vapor deposition at low temperatures, SOL EN MAT, 66(1-4), 2001, pp. 431-435
Authors:
Andoh, N
Hayashi, K
Shirasawa, T
Sameshima, T
Kamisako, K
Citation: N. Andoh et al., Effect of film thickness on electrical property of microcrystalline silicon, SOL EN MAT, 66(1-4), 2001, pp. 437-441
Authors:
Sakamoto, K
Asada, K
Sameshima, T
Citation: K. Sakamoto et al., Field effect surface passivation of SiO2/Si interfaces by heat treatment with high-pressure H2O vapor, SOL EN MAT, 65(1-4), 2001, pp. 565-570
Authors:
Sakamoto, K
Asada, K
Sameshima, T
Saitoh, T
Citation: K. Sakamoto et al., High-pressure H2O vapor heating used for passivation of SiO2/Si interfaces, SOL EN MAT, 65(1-4), 2001, pp. 571-576
Authors:
Sameshima, T
Sakamoto, K
Asada, K
Kondo, M
Matsuda, A
Higashi, S
Citation: T. Sameshima et al., Reduction of defects of polycrystalline silicon thin films by heat treatment with high-pressure H2O vapor, SOL EN MAT, 65(1-4), 2001, pp. 577-583
Authors:
Sameshima, T
Fukushima, K
Yamada, T
Citation: T. Sameshima et al., Chaotic transition in a five-coupled phi(4)-field soliton system, PHYSICA D, 150(1-2), 2001, pp. 104-117
Authors:
Tamada, Y
Nakaoka, Y
Nishimori, K
Doi, A
Kumaki, T
Uemura, N
Tanaka, K
Makino, SI
Sameshima, T
Akiba, M
Nakazawa, M
Uchida, I
Citation: Y. Tamada et al., Molecular typing and epidemiological study of Salmonella enterica serotypetyphimurium isolates from cattle by fluorescent amplified-fragment length polymorphism fingerprinting and pulsed-field gel electrophoresis, J CLIN MICR, 39(3), 2001, pp. 1057-1066
Authors:
Sameshima, T
Ozaki, K
Citation: T. Sameshima et K. Ozaki, Crystallization of silicon thin films by current-induced joule heating, THIN SOL FI, 383(1-2), 2001, pp. 107-109
Authors:
Watanabe, T
Sameshima, T
Nakahata, K
Kamiya, T
Shimizu, I
Citation: T. Watanabe et al., Free carrier optical absorption used to analyze the electrical properties of polycrystalline silicon films formed by plasma enhanced chemical vapor deposition, THIN SOL FI, 383(1-2), 2001, pp. 248-250
Authors:
Sameshima, T
Andoh, N
Takahashi, H
Citation: T. Sameshima et al., Rapid crystallization of silicon films using electrical-current-induced joule heating, J APPL PHYS, 89(10), 2001, pp. 5362-5367
Authors:
Ogura, O
Takebayashi, Y
Sameshima, T
Maeda, S
Yamada, K
Hata, K
Akiba, S
Aikou, T
Citation: O. Ogura et al., Preoperative assessment of vascularity by color Doppler ultrasonography inhuman rectal carcinoma, DIS COL REC, 44(4), 2001, pp. 538-546
Authors:
Ogura, O
Takabayashi, Y
Sameshima, T
Maeda, S
Yamada, K
Hata, K
Akiba, S
Aikou, T
Citation: O. Ogura et al., Preoperative assessment of vascularity by color Doppler ultrasonography inhuman rectal carcinoma - Reply, DIS COL REC, 44(4), 2001, pp. 547-548
Authors:
Asada, K
Sakamoto, K
Watanabe, T
Sameshima, T
Higashi, S
Citation: K. Asada et al., Heat treatment with high-pressure H2O vapor of pulsed laser crystallized silicon films, JPN J A P 1, 39(7A), 2000, pp. 3883-3887
Authors:
Sakamoto, K
Sameshima, T
Citation: K. Sakamoto et T. Sameshima, Passivation of SiO2/Si interfaces using high-pressure-H2O-vapor heating, JPN J A P 1, 39(5A), 2000, pp. 2492-2496