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Results: 1-9 |
Results: 9
Modeling the variation of the low-frequency noise in polysilicon emitter bipolar junction transistors
Authors: Sanden, M Marinov, O Deen, MJ Ostling, M
Citation: M. Sanden et al., Modeling the variation of the low-frequency noise in polysilicon emitter bipolar junction transistors, IEEE ELEC D, 22(5), 2001, pp. 242-244
An analytical model for space-charge region capacitance based on practicaldoping profiles under any bias conditions
Authors: Ma, PX Linder, M Sanden, M Zhang, SL Ostling, M Chang, MCF
Citation: Px. Ma et al., An analytical model for space-charge region capacitance based on practicaldoping profiles under any bias conditions, SOL ST ELEC, 45(1), 2001, pp. 159-167
Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors
Authors: Sanden, M Malm, BG Grahn, JV Ostling, M
Citation: M. Sanden et al., Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors, MICROEL REL, 41(6), 2001, pp. 881-886
A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
Authors: Grahn, JV Fosshaug, H Jargelius, M Jonsson, P Linder, M Malm, BG Mohadjeri, B Pejnefors, J Radamson, HH Sanden, M Wang, YB Landgren, G Ostling, M
Citation: Jv. Grahn et al., A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget, SOL ST ELEC, 44(3), 2000, pp. 549-554
Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors
Authors: Sanden, M Malm, BG Grahn, JV Ostling, M
Citation: M. Sanden et al., Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors, MICROEL REL, 40(11), 2000, pp. 1863-1867
A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors
Authors: Sanden, M Zhang, SL Grahn, JV Ostling, M
Citation: M. Sanden et al., A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors, IEEE DEVICE, 47(9), 2000, pp. 1767-1769
The influence on electrical performance of double-polysilicon bipolar transistors by forming gas annealing
Authors: Sanden, M Karlin, TE Ma, P Grahn, JV Zhang, SL Ostling, M
Citation: M. Sanden et al., The influence on electrical performance of double-polysilicon bipolar transistors by forming gas annealing, PHYS SCR, T79, 1999, pp. 243-245
A simplified high-speed bipolar process with Ti salicide metallization: Implementation of in situ p-doped polysilicon emitter
Authors: Kaplan, W Pejnefors, J Linder, M Sanden, M Karlin, TE Malm, G Zhang, SL Grahn, JV Ostling, M
Citation: W. Kaplan et al., A simplified high-speed bipolar process with Ti salicide metallization: Implementation of in situ p-doped polysilicon emitter, PHYS SCR, T79, 1999, pp. 318-321
The effect of hydrogen passivation on electrical characteristics of double-polysilicon self-aligned bipolar transistors
Authors: Sanden, M Karlin, TE Ma, P Grahn, JV Zhang, SL Ostling, M
Citation: M. Sanden et al., The effect of hydrogen passivation on electrical characteristics of double-polysilicon self-aligned bipolar transistors, SOL ST ELEC, 43(3), 1999, pp. 615-620
Risultati: 1-9 |