Citation: Sd. Sartale et Cd. Lokhande, Preparation and characterization of nickel sulphide thin films using successive ionic layer adsorption and reaction (SILAR) method, MATER CH PH, 72(1), 2001, pp. 101-104
Citation: Sd. Sartale et Cd. Lokhande, Studies on large area (similar to 50 cm(2)) MoS2 thin films deposited using successive ionic layer adsorption and reaction (SILAR) method, MATER CH PH, 71(1), 2001, pp. 94-97
Citation: Sd. Sartale et Cd. Lokhande, Electrochemical deposition and oxidation of CuFe2 alloy: a new method to deposit CuFe2O4 thin films at room temperature, MATER CH PH, 70(3), 2001, pp. 274-284
Authors:
Sartale, SD
Bagde, GD
Lokhande, CD
Giersig, M
Citation: Sd. Sartale et al., Room temperature synthesis of nanocrystalline ferrite (MFe2O4, M = Cu, Co and Ni) thin films using novel electrochemical route, APPL SURF S, 182(3-4), 2001, pp. 366-371
Authors:
Lokhande, CD
Sankapal, BR
Sartale, SD
Pathan, HM
Giersig, M
Ganesan, V
Citation: Cd. Lokhande et al., A novel method for the deposition of nanocrystalline Bi2Se3, Sb2Se3 and Bi2Se3-Sb2Se3 thin films - SILAR, APPL SURF S, 182(3-4), 2001, pp. 413-417
Citation: Sd. Sartale et Cd. Lokhande, Room temperature preparation of NiFe2O4 thin films by electrochemical route, I J ENG M S, 7(5-6), 2000, pp. 404-410
Citation: Sd. Sartale et Cd. Lokhande, Growth of copper sulphide thin films by successive ionic layer adsorption and reaction (SILAR) method, MATER CH PH, 65(1), 2000, pp. 63-67
Citation: Sd. Sartale et Cd. Lokhande, Preparation and characterization of As2S3 thin films deposited using successive ionic layer adsorption and reaction (SILAR) method, MATER RES B, 35(8), 2000, pp. 1345-1353
Citation: Sd. Sartale et Cd. Lokhande, Deposition of cobalt sulphide thin films by successive ionic layer adsorption and reaction (SILAR) method and their characterization, I J PA PHYS, 38(1), 2000, pp. 48-52