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Results: 1-12 |
Results: 12
Notch formation by stress enhanced spontaneous etching of polysilicon
Authors: Chang, JP Sawin, HH
Citation: Jp. Chang et Hh. Sawin, Notch formation by stress enhanced spontaneous etching of polysilicon, J VAC SCI B, 19(5), 2001, pp. 1870-1873
Molecular-beam study of the plasma-surface kinetics of silicon dioxide andphotoresist etching with chlorine
Authors: Chang, JP Sawin, HH
Citation: Jp. Chang et Hh. Sawin, Molecular-beam study of the plasma-surface kinetics of silicon dioxide andphotoresist etching with chlorine, J VAC SCI B, 19(4), 2001, pp. 1319-1327
Silicon etching yields in F-2, Cl-2, Br-2, and HBr high density plasmas
Authors: Vitale, SA Chae, H Sawin, HH
Citation: Sa. Vitale et al., Silicon etching yields in F-2, Cl-2, Br-2, and HBr high density plasmas, J VAC SCI A, 19(5), 2001, pp. 2197-2206
Time resolved ultraviolet absorption spectroscopy of pulsed fluorocarbon plasmas
Authors: Cruden, BA Gleason, KK Sawin, HH
Citation: Ba. Cruden et al., Time resolved ultraviolet absorption spectroscopy of pulsed fluorocarbon plasmas, J APPL PHYS, 89(2), 2001, pp. 915-922
Low open-area endpoint detection using a PCA-based T-2 statistic and Q statistic on optical emission spectroscopy measurements
Authors: White, DA Goodlin, BE Gower, AE Boning, DS Chen, H Sawin, HH Dalton, TJ
Citation: Da. White et al., Low open-area endpoint detection using a PCA-based T-2 statistic and Q statistic on optical emission spectroscopy measurements, IEEE SEMIC, 13(2), 2000, pp. 193-207
Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in F-2+O-2 and Cl-2+O-2 high density plasmas
Authors: Vitale, SA Chae, H Sawin, HH
Citation: Sa. Vitale et al., Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in F-2+O-2 and Cl-2+O-2 high density plasmas, J VAC SCI A, 18(6), 2000, pp. 2770-2778
Abatement of C2F6 in rf and microwave plasma reactors
Authors: Vitale, SA Sawin, HH
Citation: Sa. Vitale et Hh. Sawin, Abatement of C2F6 in rf and microwave plasma reactors, J VAC SCI A, 18(5), 2000, pp. 2217-2223
Microfabrication and testing of suspended structures compatible with silicon-on-insulator technology
Authors: Ayon, AA Ishihara, K Braff, RA Sawin, HH Schmidt, MA
Citation: Aa. Ayon et al., Microfabrication and testing of suspended structures compatible with silicon-on-insulator technology, J VAC SCI B, 17(4), 1999, pp. 1589-1593
A statistical analysis of single and multiple response surface modeling
Authors: Smith, TH Goodlin, BE Boning, DS Sawin, HH
Citation: Th. Smith et al., A statistical analysis of single and multiple response surface modeling, IEEE SEMIC, 12(4), 1999, pp. 419-430
Application of the footing effect in the micromachining of self-aligned, free-standing, complimentary metal-oxide-semiconductor compatible structures
Authors: Ayon, AA Ishihara, K Braff, RA Sawin, HH Schmidt, MA
Citation: Aa. Ayon et al., Application of the footing effect in the micromachining of self-aligned, free-standing, complimentary metal-oxide-semiconductor compatible structures, J VAC SCI A, 17(4), 1999, pp. 2274-2279
Influence of coil power on the etching characteristics in a high density plasma etcher
Authors: Ayon, AA Braff, RA Bayt, R Sawin, HH Schmidt, MA
Citation: Aa. Ayon et al., Influence of coil power on the etching characteristics in a high density plasma etcher, J ELCHEM SO, 146(7), 1999, pp. 2730-2736
Characterization of a time multiplexed inductively coupled plasma etcher
Authors: Ayon, AA Braff, R Lin, CC Sawin, HH Schmidt, MA
Citation: Aa. Ayon et al., Characterization of a time multiplexed inductively coupled plasma etcher, J ELCHEM SO, 146(1), 1999, pp. 339-349
Risultati: 1-12 |