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Results:
1-16
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Results: 16
Authors:
Kondo, T
Schlenker, D
Miyamoto, T
Chen, ZB
Kawaguchi, M
Gouardes, E
Koyama, F
Iga, K
Citation: T. Kondo et al., Lasing characteristics of 1.2 mu m highly strained GaInAs/GaAs quantum well lasers, JPN J A P 1, 40(2A), 2001, pp. 467-471
Authors:
Kawaguchi, M
Miyamoto, T
Gouardes, E
Schlenker, D
Kondo, T
Koyama, F
Iga, K
Citation: M. Kawaguchi et al., Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition, JPN J A P 2, 40(7B), 2001, pp. L744-L746
Authors:
Schlenker, D
Miyamoto, T
Chen, ZB
Kawaguchi, M
Kondo, T
Gouardes, E
Gemmer, J
Gemmer, C
Koyama, F
Iga, K
Citation: D. Schlenker et al., Inclusion of strain effect in miscibility gap calculations for III-V semiconductors, JPN J A P 1, 39(10), 2000, pp. 5751-5757
Authors:
Kawaguchi, M
Miyamoto, T
Gouardes, E
Schlenker, D
Kondo, T
Koyama, F
Iga, K
Citation: M. Kawaguchi et al., Optical quality dependence on growth rate for metalorganic chemical vapor deposition grown GaInNAs/GaAs, JPN J A P 2, 39(12A), 2000, pp. L1219-L1220
Authors:
Koyama, F
Schlenker, D
Miyamoto, T
Chen, Z
Matsutani, A
Sakaguchi, T
Iga, K
Citation: F. Koyama et al., Data transmission over single-mode fiber by using 1.2-mu m uncooled GaInAs-GaAs laser for Gb/s local area network, IEEE PHOTON, 12(2), 2000, pp. 125-127
Authors:
Schlenker, D
Miyamoto, T
Chen, ZB
Kawaguchi, M
Kondo, T
Gouardes, E
Koyama, F
Iga, K
Citation: D. Schlenker et al., Critical layer thickness of 1.2-mu m highly strained GaInAs/GaAs quantum wells, J CRYST GR, 221, 2000, pp. 503-508
Authors:
Miyamoto, T
Kageyama, T
Makino, S
Schlenker, D
Koyama, F
Iga, K
Citation: T. Miyamoto et al., CBE and MOCVD growth of GaInNAs, J CRYST GR, 209(2-3), 2000, pp. 339-344
Authors:
Schlenker, D
Miyamoto, T
Chen, Z
Koyama, F
Iga, K
Citation: D. Schlenker et al., Growth of highly strained GaInAs/GaAs quantum wells for 1.2 mu m wavelength lasers, J CRYST GR, 209(1), 2000, pp. 27-36
Authors:
Kawaguchi, M
Gouardes, E
Schlenker, D
Kondo, T
Miyamoto, T
Koyama, F
Iga, K
Citation: M. Kawaguchi et al., Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition, ELECTR LETT, 36(21), 2000, pp. 1776-1777
Authors:
Schlenker, D
Pan, Z
Miyamoto, T
Koyama, F
Iga, K
Citation: D. Schlenker et al., Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer, JPN J A P 1, 38(9A), 1999, pp. 5023-5027
Authors:
Pan, Z
Miyamoto, T
Schlenker, D
Koyama, F
Iga, K
Citation: Z. Pan et al., Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine, JPN J A P 1, 38(2B), 1999, pp. 1012-1014
Authors:
Chen, ZB
Schlenker, D
Miyamoto, T
Kondo, T
Kawaguchi, M
Koyama, F
Iga, K
Citation: Zb. Chen et al., High temperature characteristics of nearly 1.2 mu m GaInAs/GaAs/AlGaAs lasers, JPN J A P 2, 38(10B), 1999, pp. L1178-L1179
Authors:
Schlenker, D
Miyamoto, T
Chen, Z
Koyama, F
Iga, K
Citation: D. Schlenker et al., 1.17-mu m highly strained GaInAs-GaAs quantum-well laser, IEEE PHOTON, 11(8), 1999, pp. 946-948
Authors:
Schlenker, D
Miyamoto, T
Pan, Z
Koyama, F
Iga, K
Citation: D. Schlenker et al., Miscibility gap calculation for Ga1-xInxNyAs1-y including strain effects, J CRYST GR, 196(1), 1999, pp. 67-70
Authors:
Koyama, F
Schlenker, D
Miyamoto, T
Chen, Z
Matsutani, A
Sakaguchi, T
Iga, K
Citation: F. Koyama et al., 1.2 mu m highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink, ELECTR LETT, 35(13), 1999, pp. 1079-1081
Authors:
Miyamoto, T
Sato, S
Pan, Z
Schlenker, D
Koyama, F
Iga, K
Citation: T. Miyamoto et al., GaNAs/GaInAs short-period superlattice quantum well structures grown by MOCVD using TBAs and DMHy, J CRYST GR, 195(1-4), 1998, pp. 421-426
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