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Results: 1-18 |
Results: 18

Authors: Gerthsen, D Neubauer, B Rosenauer, A Stephan, T Kalt, H Schon, O Heuken, M
Citation: D. Gerthsen et al., InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition, APPL PHYS L, 79(16), 2001, pp. 2552-2554

Authors: Yablonskii, GP Lutsenko, EV Pavlovskii, VN Marko, IP Gurskii, AL Zubialevich, VZ Mudryi, AV Schon, O Protzmann, H Lunenburger, M Schineller, B Heuken, M Kalisch, H Heime, K
Citation: Gp. Yablonskii et al., Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emissionwavelength in the spectral range of 450-470 nm, APPL PHYS L, 79(13), 2001, pp. 1953-1955

Authors: Schineller, B Lim, PH Yablonskii, GP Lutsenko, EV Schon, O Protzmann, H Heuken, M Heime, K
Citation: B. Schineller et al., Characterization of undoped and silicon-doped InGaN/GaN single quantum wells, J ELEC MAT, 29(1), 2000, pp. 31-36

Authors: Alam, A Schon, O Schineller, B Heuken, M Jurgensen, H
Citation: A. Alam et al., MOVPE growth optimization using computer supported Design of Experiments (DoE), PHYS ST S-A, 180(1), 2000, pp. 109-114

Authors: Yablonskii, GP Lutsenko, EV Marko, IP Pavlovskii, VN Mudryi, AV Stognij, AI Schon, O Protzmann, H Lunenburger, M Schineller, B Heuken, M Heime, K
Citation: Gp. Yablonskii et al., Stimulated emission, electro- and photoluminescence of InGaN/GaN EL-test and SQW heterostructures grown by MOVPE, PHYS ST S-A, 180(1), 2000, pp. 149-155

Authors: Holst, J Kaschner, A Gfug, U Hoffmann, A Thomsen, C Bertram, F Riemann, T Rudloff, D Christen, J Averbeck, R Riechert, H Heuken, M Schwambera, M Schon, O
Citation: J. Holst et al., Comparison of the mechanism of optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy and MOCVD, PHYS ST S-A, 180(1), 2000, pp. 327-332

Authors: Gerthsen, D Hahn, E Neubauer, B Rosenauer, A Schon, O Heuken, M Rizzi, A
Citation: D. Gerthsen et al., Composition fluctuations in InGaN analyzed by transmission electron microscopy, PHYS ST S-A, 177(1), 2000, pp. 145-155

Authors: Salanoubat, M Lemcke, K Rieger, M Ansorge, W Unseld, M Fartmann, B Valle, G Blocker, H Perez-Alonso, M Obermaier, B Delseny, M Boutry, M Grivell, LA Mache, R Puigdomenech, P De Simone, V Choisne, N Artiguenave, F Robert, C Brottier, P Wincker, P Cattolico, L Weissenbach, J Saurin, W Quetier, F Schafer, M Muller-Auer, S Gabel, C Fuchs, M Benes, V Wurmbach, E Drzonek, H Erfle, H Jordan, N Bangert, S Wiedelmann, R Kranz, H Voss, H Holland, R Brandt, P Nyakatura, G Vezzi, A D'Angelo, M Pallavicini, A Toppo, S Simionati, B Conrad, A Hornischer, K Kauer, G Lohnert, TH Nordsiek, G Reichelt, J Scharfe, M Schon, O Bargues, M Terol, J Climent, J Navarro, P Collado, C Perez-Perez, A Ottenwalder, B Duchemin, D Cooke, R Laudie, M Berger-Llauro, C Purnelle, B Masuy, D de Haan, M Maarse, AC Alcaraz, JP Cottet, A Casacuberta, E Monfort, A Argiriou, A Flores, M Liguori, R Vitale, D Mannhaupt, G Haase, D Schoof, H Rudd, S Zaccaria, P Mewes, HW Mayer, KFX Kaul, S Town, CD Koo, HL Tallon, LJ Jenkins, J Rooney, T Rizzo, M Walts, A Utterback, T Fujii, CY Shea, TP Creasy, TH Haas, B Maiti, R Wu, DY Peterson, J Van Aken, S Pai, G Militscher, J Sellers, P Gill, JE Feldblyum, TV Preuss, D Lin, XY Nierman, WC Salzberg, SL White, O Venter, JC Fraser, CM Kaneko, T Nakamura, Y Sato, S Kato, T Asamizu, E Sasamoto, S Kimura, T Idesawa, K Kawashima, K Kishida, Y Kiyokawa, C Kohara, M Matsumoto, M Matsuno, A Muraki, A Nakayama, S Nakazaki, N Shinpo, S Takeuchi, C Wada, T Watanabe, A Yamada, M Yasuda, M Tabata, S
Citation: M. Salanoubat et al., Sequence and analysis of chromosome 3 of the plant Arabidopsis thaliana, NATURE, 408(6814), 2000, pp. 820-822

Authors: Hattori, M Fujiyama, A Taylor, TD Watanabe, H Yada, T Park, HS Toyoda, A Ishii, K Totoki, Y Choi, DK Groner, Y Soeda, E Ohki, M Takagi, T Sakaki, Y Taudien, S Blechschmidt, K Polley, A Menzel, U Delabar, J Kumpf, K Lehmann, R Patterson, D Reichwald, K Rump, A Schillhabel, M Schudy, A Zimmermann, W Rosenthal, A Kudoh, J Schibuya, K Kawasaki, K Asakawa, S Shintani, A Sasaki, T Nagamine, K Mitsuyama, S Antonarakis, SE Minoshima, S Shimizu, N Nordsiek, G Hornischer, K Brant, P Scharfe, M Schon, O Desario, A Reichelt, J Kauer, G Blocker, H Ramser, J Beck, A Klages, S Hennig, S Riesselmann, L Dagand, E Haaf, T Wehrmeyer, S Borzym, K Gardiner, K Nizetic, D Francis, F Lehrach, H Reinhardt, R Yaspo, ML
Citation: M. Hattori et al., The DNA sequence of human chromosome 21 (vol 405, pg 311, 2000), NATURE, 407(6800), 2000, pp. 110-110

Authors: Hattori, M Fujiyama, A Taylor, TD Watanabe, H Yada, T Park, HS Toyoda, A Ishii, K Totoki, Y Choi, DK Soeda, E Ohki, M Takagi, T Sakaki, Y Taudien, S Blechschmidt, K Polley, A Menzel, U Delabar, J Kumpf, K Lehmann, R Patterson, D Reichwald, K Rump, A Schillhabel, M Schudy, A Zimmermann, W Rosenthal, A Kudoh, J Shibuya, K Kawasaki, K Asakawa, S Shintani, A Sasaki, T Nagamine, K Mitsuyama, S Antonarakis, SE Minoshima, S Shimizu, N Nordsiek, G Hornischer, K Brandt, P Scharfe, M Schon, O Desario, A Reichelt, J Kauer, G Blocker, H Ramser, J Beck, A Klages, S Hennig, S Riesselmann, L Dagand, E Haaf, T Wehrmeyer, S Borzym, K Gardiner, K Nizetic, D Francis, F Lehrach, H Reinhardt, R Yaspo, ML
Citation: M. Hattori et al., The DNA sequence of human chromosome 21, NATURE, 405(6784), 2000, pp. 311-319

Authors: Krost, A Blasing, J Schulze, F Schon, O Alam, A Heuken, M
Citation: A. Krost et al., Nearly strain-free AlGaN on (0001) sapphire: X-ray measurements and a new crystallographic growth model, J CRYST GR, 221, 2000, pp. 251-257

Authors: Marko, IP Lutsenko, EV Pavlovskii, VN Yablonskii, GP Schon, O Protzmann, H Lunenburger, M Heuken, M Schineller, B Heime, K
Citation: Ip. Marko et al., Influence of UV light-assisted annealing on optical properties of InGaN/GaN heterostructures grown by MOVPE, PHYS ST S-B, 216(1), 1999, pp. 175-179

Authors: Schineller, B Lim, PH Schon, O Protzmann, H Heuken, M Heime, K
Citation: B. Schineller et al., Characterization of InGaN single layers and quantum wells grown by LP-MOVPE, PHYS ST S-B, 216(1), 1999, pp. 311-314

Authors: Marko, IP Lutsenko, EV Pavlovskii, VN Yablonskii, GP Schon, O Protzmann, H Lunenburger, M Heuken, M Schineller, B Heime, K
Citation: Ip. Marko et al., High-temperature lasing in InGaN/GaN multiquantum well heterostructures, PHYS ST S-B, 216(1), 1999, pp. 491-494

Authors: Seitz, R Gaspar, C Monteiro, T Pereira, L Pereira, E Schon, O Heuken, M
Citation: R. Seitz et al., Electrical and photoelectronic properties of hexagonal GaN, PHYS ST S-A, 176(1), 1999, pp. 351-354

Authors: Lim, PH Schineller, B Schon, O Heime, K Heuken, M
Citation: Ph. Lim et al., Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE), J CRYST GR, 205(1-2), 1999, pp. 1-10

Authors: Bode, J Bartsch, J Benham, C Janusch, H Knopp, A Olopade, F Schon, O Seibler, J Strissel, P
Citation: J. Bode et al., Sixth international workshop on chromosome 9 - Abstracts, ANN HUM GEN, 63, 1999, pp. 119-124

Authors: Schineller, B Guttzeit, A Lim, PH Schwambera, M Heime, K Schon, O Heuken, M
Citation: B. Schineller et al., The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPE, J CRYST GR, 195(1-4), 1998, pp. 274-279
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