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Results: 1-7 |
Results: 7

Authors: Scribner, D Warren, P Schuler, O
Citation: D. Scribner et al., Extending color vision methods to bands beyond the visible, MACH VIS A, 11(6), 2000, pp. 306-312

Authors: Wallart, X Schuler, O Deresmes, D Mollot, F
Citation: X. Wallart et al., Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers, APPL PHYS L, 76(15), 2000, pp. 2080-2082

Authors: Mollot, F Lamin, JF Schuler, O
Citation: F. Mollot et al., Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus, J PHYS IV, 9(P2), 1999, pp. 145-150

Authors: Zaknoune, M Schuler, O Piotrowicz, S Mollot, F Theron, D Crosnier, Y
Citation: M. Zaknoune et al., High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy, IEEE MICR G, 9(1), 1999, pp. 28-30

Authors: Schuler, O Wallart, X Mollot, F
Citation: O. Schuler et al., A gas-source MBE growth study of strained Ga1-xInxP layers on GaAs, J CRYST GR, 202, 1999, pp. 280-283

Authors: Zaknoune, M Schuler, O Mollot, F Theron, D Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances, ELECTR LETT, 35(6), 1999, pp. 501-502

Authors: Zaknoune, M Schuler, O Mollot, F Theron, D Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m (Al0.5Ga0.5)(0.5)In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy, ELECTR LETT, 35(20), 1999, pp. 1776-1777
Risultati: 1-7 |