Authors:
Wallart, X
Schuler, O
Deresmes, D
Mollot, F
Citation: X. Wallart et al., Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers, APPL PHYS L, 76(15), 2000, pp. 2080-2082
Citation: F. Mollot et al., Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus, J PHYS IV, 9(P2), 1999, pp. 145-150
Authors:
Zaknoune, M
Schuler, O
Piotrowicz, S
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy, IEEE MICR G, 9(1), 1999, pp. 28-30
Authors:
Zaknoune, M
Schuler, O
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances, ELECTR LETT, 35(6), 1999, pp. 501-502
Authors:
Zaknoune, M
Schuler, O
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m (Al0.5Ga0.5)(0.5)In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy, ELECTR LETT, 35(20), 1999, pp. 1776-1777