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Citation: Jn. Schulman et al., InGaAs zero bias backward diodes for millimeter wave direct detection, IEEE ELEC D, 22(5), 2001, pp. 200-202

Authors: Fay, P Jiang, L Xu, Y Bernstein, GH Chow, DH Schulman, JN Dunlap, HL De Los Santos, HJ

Citation: P. Fay et al., Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes, IEEE DEVICE, 48(6), 2001, pp. 1282-1284

Authors: Fay, P Lu, J Xu, Y Bernstein, GH Gonzalez, A Mazumder, P Chow, DH Schulman, JN

Citation: P. Fay et al., Digital integrated circuit using integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb RITDs, ELECTR LETT, 37(12), 2001, pp. 758-759

Authors: Schulman, JN Chow, DH

Citation: Jn. Schulman et Dh. Chow, Sb-heterostructure interband backward diodes, IEEE ELEC D, 21(7), 2000, pp. 353-355

Authors: Schulman, JN

Citation: Jn. Schulman, Analysis of Sb-based resonant interband tunnel diodes for circuit modeling, SOL ST ELEC, 43(8), 1999, pp. 1367-1371

Authors: Walachova, J Zelinka, J Vanis, J Chow, DH Schulman, JN Karamazov, S Cukr, M Zich, P Krai, J McGill, TC

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