Authors: Tan, Y Liou, JJ Gessner, J Schwierz, F

Citation: Y. Tan et al., Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation, SOL ST ELEC, 45(5), 2001, pp. 727-734

Authors: Schwierz, F Liou, JJ

Citation: F. Schwierz et Jj. Liou, Semiconductor devices for RF applications: evolution and current status, MICROEL REL, 41(2), 2001, pp. 145-168

Authors: Roschke, M Schwierz, F

Citation: M. Roschke et F. Schwierz, Electron mobility models for 4H, 6H, and 3C SiC, IEEE DEVICE, 48(7), 2001, pp. 1442-1447

Authors: Polyakov, VM Schwierz, F

Citation: Vm. Polyakov et F. Schwierz, Influence of electron mobility modeling on DC I-V characteristics of WZ-GaN MESFET, IEEE DEVICE, 48(3), 2001, pp. 512-516