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Results: 4
Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation
Authors:
Tan, Y Liou, JJ Gessner, J Schwierz, F
Citation:
Y. Tan et al., Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation, SOL ST ELEC, 45(5), 2001, pp. 727-734
Semiconductor devices for RF applications: evolution and current status
Authors:
Schwierz, F Liou, JJ
Citation:
F. Schwierz et Jj. Liou, Semiconductor devices for RF applications: evolution and current status, MICROEL REL, 41(2), 2001, pp. 145-168
Electron mobility models for 4H, 6H, and 3C SiC
Authors:
Roschke, M Schwierz, F
Citation:
M. Roschke et F. Schwierz, Electron mobility models for 4H, 6H, and 3C SiC, IEEE DEVICE, 48(7), 2001, pp. 1442-1447
Influence of electron mobility modeling on DC I-V characteristics of WZ-GaN MESFET
Authors:
Polyakov, VM Schwierz, F
Citation:
Vm. Polyakov et F. Schwierz, Influence of electron mobility modeling on DC I-V characteristics of WZ-GaN MESFET, IEEE DEVICE, 48(3), 2001, pp. 512-516
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