Authors: Seaford, ML

Citation: Ml. Seaford, Special issue on compliant and alternative substrate technology - Foreword, J ELEC MAT, 29(7), 2000, pp. 893-893

Authors: Seaford, ML Tomich, DH Eyink, KG Grazulis, L Mahalingham, K Yang, Z Wang, WI

Citation: Ml. Seaford et al., Comparison of GaAs grown on standard Si (511) and compliant SOI (511), J ELEC MAT, 29(7), 2000, pp. 906-908

Authors: Tomich, DH Eyink, KG Grazulis, L Brown, GL Szmulowicz, F Mahalingam, K Seaford, ML Kuo, CH Hwang, WY Lin, CH

Citation: Dh. Tomich et al., Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates, J ELEC MAT, 29(7), 2000, pp. 940-943

Authors: Seaford, ML Solomon, JS Tomich, DH Eyink, KG

Citation: Ml. Seaford et al., The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices, J ELEC MAT, 28(8), 1999, pp. 955-958

Authors: Seaford, ML Hesse, PJ Tomich, DH Eyink, KG

Citation: Ml. Seaford et al., Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates, J ELEC MAT, 28(7), 1999, pp. 878-880