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Results: 1-9 |
Results: 9
Comparison of titanium and platinum Schottky barrier heights to Ga0.47In0.53As obtained from Franz Keldysh oscillations and Schottky diode characteristics
Authors: Shamir, N Sheinman, B Ritter, D Gershoni, D
Citation: N. Shamir et al., Comparison of titanium and platinum Schottky barrier heights to Ga0.47In0.53As obtained from Franz Keldysh oscillations and Schottky diode characteristics, SOL ST ELEC, 45(3), 2001, pp. 475-482
Low electric field hole impact ionization coefficients in GaInAs and GaInAsP
Authors: Shamir, N Ritter, D
Citation: N. Shamir et D. Ritter, Low electric field hole impact ionization coefficients in GaInAs and GaInAsP, IEEE ELEC D, 21(11), 2000, pp. 509-511
Passivation of uranium towards air corrosion by N-2(+) and C+ ion implantation
Authors: Arkush, R Mintz, MH Shamir, N
Citation: R. Arkush et al., Passivation of uranium towards air corrosion by N-2(+) and C+ ion implantation, J NUCL MAT, 281(2-3), 2000, pp. 182-190
Trapping and detrapping of electrons photoinjected from silicon to ultrathin SiO2 overlayers. I. In vacuum and in the presence of ambient oxygen
Authors: Shamir, N Mihaychuk, JG van Driel, HM
Citation: N. Shamir et al., Trapping and detrapping of electrons photoinjected from silicon to ultrathin SiO2 overlayers. I. In vacuum and in the presence of ambient oxygen, J APPL PHYS, 88(2), 2000, pp. 896-908
Trapping and detrapping of electrons photoinjected from silicon to ultrathin SiO2 overlayers. II. In He, Ar, H-2, N-2, CO, and N2O
Authors: Shamir, N van Driel, HM
Citation: N. Shamir et Hm. Van Driel, Trapping and detrapping of electrons photoinjected from silicon to ultrathin SiO2 overlayers. II. In He, Ar, H-2, N-2, CO, and N2O, J APPL PHYS, 88(2), 2000, pp. 909-917
Lower limit of method for the extraction of ionization coefficients from the electrical characteristics of heterojunction bipolar transistors
Authors: Shamir, N Ritter, D
Citation: N. Shamir et D. Ritter, Lower limit of method for the extraction of ionization coefficients from the electrical characteristics of heterojunction bipolar transistors, IEEE DEVICE, 47(2), 2000, pp. 488-490
Multiphoton photoemission and electric-field-induced optical second-harmonic generation as probes of charge transfer across the Si/SiO2 interface
Authors: Mihaychuk, JG Shamir, N van Driel, HM
Citation: Jg. Mihaychuk et al., Multiphoton photoemission and electric-field-induced optical second-harmonic generation as probes of charge transfer across the Si/SiO2 interface, PHYS REV B, 59(3), 1999, pp. 2164-2173
Water vapor interactions with polycrystalline titanium surfaces
Authors: Azoulay, A Shamir, N Volterra, V Mintz, MH
Citation: A. Azoulay et al., Water vapor interactions with polycrystalline titanium surfaces, SURF SCI, 422(1-3), 1999, pp. 141-153
Universal mechanism for gas adsorption and electron trapping on oxidized silicon
Authors: Shamir, N Mihaychuk, JG van Driel, HM Kreuzer, HJ
Citation: N. Shamir et al., Universal mechanism for gas adsorption and electron trapping on oxidized silicon, PHYS REV L, 82(2), 1999, pp. 359-361
Risultati: 1-9 |