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Citation: Ks. Zhuravlev et al., Evidence for interlayer donor-acceptor recombination in type IIGaAs/AlAs superlattices, SUPERLATT M, 28(2), 2000, pp. 105-110

Authors: Shamirzaev, TS Zhuravlev, KS Toropov, AI Bakarov, AK

Citation: Ts. Shamirzaev et al., Polariton luminescence in high-purity layers of AlGaAs solid solutions, JETP LETTER, 71(4), 2000, pp. 148-150

Authors: Zhuravlev, KS Toropov, AI Shamirzaev, TS Bakarov, AK

Citation: Ks. Zhuravlev et al., Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy, APPL PHYS L, 76(9), 2000, pp. 1131-1133

Authors: Zhuravlev, KS Toropov, AI Shamirzaev, TS Bazarov, AK Rakov, YN Myakishev, YB

Citation: Ks. Zhuravlev et al., Use of high-purity AlxGa1-xAs layers in epitaxial structures for high-power microwave field-effect transistors, TECH PHYS L, 25(8), 1999, pp. 595-597

Authors: Shamirzaev, TS Zhuravlev, KS Yakusheva, NA

Citation: Ts. Shamirzaev et al., Free exciton recombination in heavily manganese-doped GaAs grown by liquid-phase epitaxy from bismuth solution, SOL ST COMM, 112(9), 1999, pp. 503-506

Authors: Shamirzaev, TS Zhuravlev, KS Yakusheva, NA Petrenko, IP

Citation: Ts. Shamirzaev et al., New complex defect in heavily doped GaAs : Zn grown by liquid phase epitaxy, PHYS ST S-B, 210(2), 1998, pp. 317-320