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Results: 1-9 |
Results: 9
Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon
Authors: Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA Kimerling, LC
Citation: Vv. Emtsev et al., Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon, MAT SCI E B, 81(1-3), 2001, pp. 74-76
Light-emitting structures based on single crystal silicon doped with erbium, holmium and ytterbium: structural, electrical and optical properties
Authors: Sobolev, NA Emel'yanov, AM Kyutt, RN Nikolaev, YA Shek, EI Aleksandrov, OV Zachar'in, AO Vdovin, VI Makoviichuk, MI Parshin, EO Yakimenko, AN
Citation: Na. Sobolev et al., Light-emitting structures based on single crystal silicon doped with erbium, holmium and ytterbium: structural, electrical and optical properties, IAN FIZ, 64(2), 2000, pp. 258-263
Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Sobolev, NA Shek, EI Michel, J Kimerling, LC
Citation: Vv. Emtsev et al., Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium, SEMICONDUCT, 33(6), 1999, pp. 603-605
Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon
Authors: Sobolev, NA Shek, EI Emel'yanov, AM Vdovin, VI Yugova, TG
Citation: Na. Sobolev et al., Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon, SEMICONDUCT, 33(6), 1999, pp. 610-612
Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA Michel, J Kimerling, LC
Citation: Vv. Emtsev et al., Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium, SEMICONDUCT, 33(10), 1999, pp. 1084-1087
Impurity effects in silicon implanted with rare-earth ions
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA Michel, J Kimerling, LC
Citation: Vv. Emtsev et al., Impurity effects in silicon implanted with rare-earth ions, PHYSICA B, 274, 1999, pp. 346-349
Extended defects in Si wafers implanted with ions of rare-earth elements
Authors: Vdovin, VI Yugova, TG Sobolev, NA Shek, EI Makovijchuk, MI Parshin, EO
Citation: Vi. Vdovin et al., Extended defects in Si wafers implanted with ions of rare-earth elements, NUCL INST B, 147(1-4), 1999, pp. 116-121
Dislocation-related luminescence in Er-implanted silicon
Authors: Sobolev, NA Gusev, OB Shek, EI Vdovin, VI Yugova, TG Emel'yanov, AM
Citation: Na. Sobolev et al., Dislocation-related luminescence in Er-implanted silicon, J LUMINESC, 80(1-4), 1998, pp. 357-361
A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon
Authors: Emtsev, VV Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA
Citation: Vv. Emtsev et al., A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon, J LUMINESC, 80(1-4), 1998, pp. 391-394
Risultati: 1-9 |