Authors: Shengurov, VG Svetlov, SP Chalkov, VY Maksimov, GA Krasil'nik, ZF Andreev, BA Stepikhova, MV Shengurov, DV Palmetshofer, L Ellmer, H

Citation: Vg. Shengurov et al., Simultaneous doping of silicon layers with erbium and oxygen in the courseof molecular-beam epitaxy, SEMICONDUCT, 35(8), 2001, pp. 918-923

Authors: Shengurov, VG Shengurov, DV

Citation: Vg. Shengurov et Dv. Shengurov, A device for sublimation molecular-beam deposition of silicon films, INSTR EXP R, 44(1), 2001, pp. 130-132

Authors: Gracheva, TA Malygin, ND Shengurov, DV Shengurov, VG

Citation: Ta. Gracheva et al., The effect of dopants on the texture formation in MBE-grown polysilicon films, TECH PHYS, 45(9), 2000, pp. 1212-1213

Authors: Orlov, LK Ivin, SV Shengurov, DV Shteinman, EA

Citation: Lk. Orlov et al., Photoluminescence properties of erbium-doped single-crystal and porous silicon films, TECH PHYS L, 25(5), 1999, pp. 393-394

Authors: Shengurov, DV Shabanov, AV Shabanov, VN

Citation: Dv. Shengurov et al., delta-doped Si layers grown by MBE under low-energy ion irradiation of thegrowing surface, INORG MATER, 35(5), 1999, pp. 421-424