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Results:
1-15
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Results: 15
Authors:
Odaka, H
Shigesato, Y
Murakami, T
Iwata, S
Citation: H. Odaka et al., Electronic structure analyses of Sn-doped In2O3, JPN J A P 1, 40(5A), 2001, pp. 3231-3235
Authors:
Yamada, N
Yasui, I
Shigesato, Y
Li, HL
Ujihira, Y
Nomura, K
Citation: N. Yamada et al., Donor compensation and carrier-transport mechanisms in tin-doped In2O3 films studied by means of conversion electron Sn-119 Mossbauer spectroscopy and Hall effect measurements, JPN J A P 1, 39(7A), 2000, pp. 4158-4163
Authors:
Shigesato, Y
Shin, N
Kamei, M
Song, PK
Yasui, I
Citation: Y. Shigesato et al., Study on fluorine-doped indium oxide films deposited by RF magnetron sputtering, JPN J A P 1, 39(11), 2000, pp. 6422-6426
Authors:
Shigesato, Y
Enomoto, M
Odaka, H
Citation: Y. Shigesato et al., Thermochromic VO2 films deposited by RF magnetron sputtering using V2O3 orV2O5 targets, JPN J A P 1, 39(10), 2000, pp. 6016-6024
Authors:
Taga, N
Shigesato, Y
Kamei, M
Citation: N. Taga et al., Electrical properties and surface morphology of heteroepitaxial-grown tin-doped indium oxide thin films deposited by molecular-beam epitaxy, J VAC SCI A, 18(4), 2000, pp. 1663-1667
Authors:
Shigesato, Y
Koshi-ishi, R
Kawashima, T
Ohsako, J
Citation: Y. Shigesato et al., Early stages of ITO deposition on glass or polymer substrates, VACUUM, 59(2-3), 2000, pp. 614-621
Authors:
Ow-Yang, CW
Shigesato, Y
Paine, DC
Citation: Cw. Ow-yang et al., Interfacial stability of an indium tin oxide thin film deposited on Si andSi0.85Ge0.15, J APPL PHYS, 88(6), 2000, pp. 3717-3724
Authors:
Song, PK
Akao, H
Kamei, M
Shigesato, Y
Yasui, I
Citation: Pk. Song et al., Preparation and crystallization of tin-doped and undoped amorphous indium oxide films deposited by sputtering, JPN J A P 1, 38(9A), 1999, pp. 5224-5226
Authors:
Song, PK
Shigesato, Y
Kamei, M
Yasui, I
Citation: Pk. Song et al., Electrical and structural properties of tin-doped indium oxide films deposited by DC sputtering at room temperature, JPN J A P 1, 38(5A), 1999, pp. 2921-2927
Authors:
Taga, N
Maekawa, M
Shigesato, Y
Yasui, I
Kamei, M
Haynes, TE
Citation: N. Taga et al., Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy (vol 37, pg 6524, 1998), JPN J A P 1, 38(3A), 1999, pp. 1596-1596
Authors:
Miyazaki, H
Kamei, M
Shigesato, Y
Yasui, I
Citation: H. Miyazaki et al., Influence of unbalanced magnetron and penning ionization for RF reactive magnetron sputtering, JPN J A P 1, 38(1A), 1999, pp. 186-191
Authors:
Futagami, T
Kamei, M
Yasui, I
Shigesato, Y
Sugimoto, N
Hayashi, Y
Citation: T. Futagami et al., Persistent spectral hole burning in samarium and aluminum codoped silica films prepared by RF sputtering, J CERAM S J, 107(5), 1999, pp. 494-496
Authors:
Taga, N
Maekawa, M
Shigesato, Y
Yasui, I
Kakei, M
Haynes, TE
Citation: N. Taga et al., Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy, JPN J A P 1, 37(12A), 1998, pp. 6524-6529
Authors:
Taga, N
Maekawa, M
Kamei, M
Yasui, I
Shigesato, Y
Citation: N. Taga et al., Effect of Sn doping on the crystal growth of indium oxide films, JPN J A P 1, 37(12A), 1998, pp. 6585-6586
Authors:
Futagami, T
Shigesato, Y
Yasui, A
Citation: T. Futagami et al., Characterization of RF-enhanced DC sputtering to deposit tin-doped indium oxide thin films, JPN J A P 1, 37(11), 1998, pp. 6210-6214
Risultati:
1-15
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