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Results: 1-25/46
Authors:
Ohno, Y
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: Y. Ohno et al., Large anisotropy of electron mobilities in laterally modulated two-dimensional systems grown on the (775)B-oriented GaAs substrates by molecular beamepitaxy, JPN J A P 2, 40(10A), 2001, pp. L1058-L1060
Authors:
Nitta, T
Ohno, Y
Shimomura, S
Hiyamizu, S
Citation: T. Nitta et al., Highly uniform and high optical quality In0.22Ga0.78As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy, J VAC SCI B, 19(5), 2001, pp. 1824-1827
Authors:
Watanabe, I
Kanzaki, K
Aoki, T
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: I. Watanabe et al., Mobility enhancement by reduced remote impurity scattering in a pseudomorphic ln(0.7)Ga(0.3)As/In0.52Al0.48As quantum well high electron mobility transistor structure with (411) A super-flat interfaces grown by molecular-beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1515-1518
Authors:
Kitada, T
Nii, K
Hiraoka, T
Shimomura, S
Hiyamizu, S
Citation: T. Kitada et al., Improved interface abruptness in pseudomorphic InGaAs/AlGaAs quantum wellswith (411) A superflat interfaces grown by molecular beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1546-1549
Authors:
Shimomura, S
Citation: S. Shimomura, Pole loci of solutions of a degenerate Garnier system, NONLINEARIT, 14(2), 2001, pp. 193-203
Authors:
Watatani, C
Edamatsu, K
Itoh, T
Hayashi, H
Shimomura, S
Hiyamizu, S
Citation: C. Watatani et al., Confined multiexciton states of GaAs/AlGaAs quantum dots grown on a (411)AGaAs surface, PHYS ST S-B, 224(2), 2001, pp. 353-356
Authors:
Shimomura, S
Kitano, Y
Kuge, H
Kitada, T
Nakajima, K
Hiyamizu, S
Citation: S. Shimomura et al., Lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (x=0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beamepitaxy, J CRYST GR, 227, 2001, pp. 72-76
Authors:
Tatsuoka, Y
Uemura, M
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: Y. Tatsuoka et al., Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate, J CRYST GR, 227, 2001, pp. 266-270
Authors:
Kitada, T
Aoki, T
Watanabe, I
Shimomura, S
Hiyamizu, S
Citation: T. Kitada et al., Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE, J CRYST GR, 227, 2001, pp. 289-293
Authors:
Ohno, Y
Nitta, T
Shimomura, S
Hiyamizu, S
Citation: Y. Ohno et al., Stacking effect of self-organized In0.15Ga0.85As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 970-974
Authors:
Higashiwaki, M
Kitada, T
Aoki, T
Shimomura, S
Yamashita, Y
Endoh, A
Hikosaka, K
Mimura, T
Matsui, T
Hiyamizu, S
Citation: M. Higashiwaki et al., DC and RF performance of 50 nm gate pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors grown on (411)A-oriented InP substrates by molecular-beam epitaxy, JPN J A P 2, 39(7B), 2000, pp. L720-L722
Authors:
Cheng, JD
Hada, T
Liu, WD
Imanishi, H
Iijima, H
Shimomura, S
Amuro, Y
Kubota, A
Higashino, K
Citation: Jd. Cheng et al., Investigation of TTV by in situ hybridization in patients with chronic hepatitis, HEPATOL RES, 18(1), 2000, pp. 43-53
Authors:
Tatsuoka, Y
Kamimoto, H
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: Y. Tatsuoka et al., Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1549-1552
Authors:
Kamimoto, H
Tatsuoka, Y
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: H. Kamimoto et al., In0.18Ga0.82As/GaAs1-yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1572-1575
Authors:
Kitano, Y
Kuriyama, R
Kitada, T
Shimomura, S
Hiyamizu, S
Nishijima, Y
Ishikawa, H
Citation: Y. Kitano et al., In0.05Ga0.95As/Al0.3Ga0.7As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1576-1578
Authors:
Kitada, T
Tatsuoka, Y
Shimomura, S
Hiyamizu, S
Citation: T. Kitada et al., As-4 pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of In0.08Ga0.92As/GaAs superlattices on (411)A GaAs substrates, J VAC SCI B, 18(3), 2000, pp. 1579-1582
Authors:
Aoki, T
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: T. Aoki et al., Super-flat interfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1598-1600
Authors:
Ohno, Y
Higashiwaki, M
Shimomura, S
Hiyamizu, S
Ikawa, S
Citation: Y. Ohno et al., Laser operation at room temperature of self-organized In0.1Ga0.9As/(GaAs)(6)(AlAs)(1) quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1672-1674
Authors:
Yusa, N
Watanabe, K
Yoshida, S
Shirafuji, N
Shimomura, S
Tani, K
Asano, S
Sato, N
Citation: N. Yusa et al., Transcription factor Sp3 activates the liver/bone/kidney-type alkaline phosphatase promoter in hematopoietic cells, J LEUK BIOL, 68(5), 2000, pp. 772-777
Authors:
Shimomura, S
Tonegawa, T
Tajima, K
Wakabayashi, N
Ikeda, N
Shobu, T
Noda, Y
Tamioka, Y
Tokura, Y
Citation: S. Shimomura et al., X-ray diffuse scattering study on charge-localized states of Pr1-xCaxMnO3 (x=0.35,0.4,0.5), PHYS REV B, 62(6), 2000, pp. 3875-3878
Authors:
Kawabe, T
Shimomura, S
Karasuda, T
Tabata, K
Suzuki, E
Yamaguchi, Y
Citation: T. Kawabe et al., Photoemission study of dissociatively adsorbed methane on a pre-oxidized SnO2 thin film, SURF SCI, 448(2-3), 2000, pp. 101-107
Authors:
Ikai, Y
Nagai, M
Shimomura, S
Citation: Y. Ikai et al., Functionalization of a data base and an analysis of its logical structure, J JPN METAL, 64(7), 2000, pp. 571-577
Authors:
Shimomura, S
Citation: S. Shimomura, On meromorphic solutions of a linear differential equation with doubly periodic coefficients, ILL J MATH, 44(3), 2000, pp. 593-601
Authors:
Yamaguchi, Y
Nagasawa, Y
Shimomura, S
Tabata, K
Suzuki, E
Citation: Y. Yamaguchi et al., A density functional theory study of the interaction of oxygen with a reduced SnO2 (110) surface, CHEM P LETT, 316(5-6), 2000, pp. 477-482
Authors:
Shinohara, K
Shimomura, S
Hiyamizu, S
Citation: K. Shinohara et al., Sharp transmission coefficient in GaAs/AlAs resonant tunneling diodes with(411)A superflat interfaces grown by molecular beam epitaxy, JPN J A P 1, 38(9A), 1999, pp. 5037-5039