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Results: 1-15 |
Results: 15
Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity
Authors: Vlasenko, LS Gorelenok, AT Emtsev, VV Kamanin, AV Kokhanovskii, SI Poloskin, DS Shmidt, NM
Citation: Ls. Vlasenko et al., Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity, TECH PHYS L, 27(1), 2001, pp. 9-10
Direct bonding of silicon wafers with the concurrent formation of diffusion layers
Authors: Grekhov, IV Kostina, LS Argunova, TS Belyakova, EI Shmidt, NM Kostin, KB Kim, ED Kim, SC
Citation: Iv. Grekhov et al., Direct bonding of silicon wafers with the concurrent formation of diffusion layers, TECH PHYS, 46(6), 2001, pp. 690-695
Surface gettering of background impurities and defects in GaAs wafers
Authors: Vlasenko, LS Gorelenok, AT Emtsev, VV Kamanin, AV Poloskin, DS Shmidt, NM
Citation: Ls. Vlasenko et al., Surface gettering of background impurities and defects in GaAs wafers, SEMICONDUCT, 35(2), 2001, pp. 177-180
Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Usikov, AS Shmidt, NM Lundin, WV
Citation: Ay. Polyakov et al., Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire, SOL ST ELEC, 45(2), 2001, pp. 255-259
Deep centers and persistent photoconductivity studies in variously grown GaN films
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Usikov, AS Shmidt, NM Pushnyi, BV Tsvetkov, DV Stepanov, SI Dmitriev, VA Mil'vidskii, MG Pavlov, VF
Citation: Ay. Polyakov et al., Deep centers and persistent photoconductivity studies in variously grown GaN films, MRS I J N S, 5, 2000, pp. NIL_798-NIL_803
Internal microstrain and distribution of composition and cathodoluminescence over lapped Al(x)Ga(1-x)Nepilayers on sapphire
Authors: Usikov, AS Tret'yakov, VV Bobyl', AV Kyutt, RN Lundin, WV Pushnyi, BV Shmidt, NM
Citation: As. Usikov et al., Internal microstrain and distribution of composition and cathodoluminescence over lapped Al(x)Ga(1-x)Nepilayers on sapphire, SEMICONDUCT, 34(11), 2000, pp. 1248-1254
Point defects in gamma-irradiated n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Lundin, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Point defects in gamma-irradiated n-GaN, SEMIC SCI T, 15(1), 2000, pp. 73-78
Effects of proton implantation on electrical and recombination properties of n-GaN
Authors: Polyakov, AY Usikov, AS Theys, B Smirnov, NB Govorkov, AV Jomard, F Shmidt, NM Lundin, WV
Citation: Ay. Polyakov et al., Effects of proton implantation on electrical and recombination properties of n-GaN, SOL ST ELEC, 44(11), 2000, pp. 1971-1983
Electrically stable p-type doping of ZnSe grown by molecular beam epitaxy with different nitrogen activators
Authors: Jmerik, VN Sorokin, SV Shubina, TV Shmidt, NM Sedova, IV Fedorov, DL Ivanov, SV Kop'ev, PS
Citation: Vn. Jmerik et al., Electrically stable p-type doping of ZnSe grown by molecular beam epitaxy with different nitrogen activators, J CRYST GR, 214, 2000, pp. 502-506
Silicon direct bonding with simultaneous Al doping
Authors: Kim, ED Kim, SC Grekhov, IV Argunova, TS Beliakova, EI Kostina, LS Shmidt, NM Kostin, KB
Citation: Ed. Kim et al., Silicon direct bonding with simultaneous Al doping, ELECTR LETT, 36(20), 2000, pp. 1738-1739
Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review
Authors: Guk, EG Kamanin, AV Shmidt, NM Shuman, VB Yurre, TA
Citation: Eg. Guk et al., Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review, SEMICONDUCT, 33(3), 1999, pp. 265-275
Effect of Si doping on structural, photoluminescence and electrical properties of GaN
Authors: Shmidt, NM Lebedev, AV Lundin, WV Pushnyi, BV Ratnikov, VV Shubina, TV Tsatsul'nikov, AA Usikov, AS Pozina, G Monemar, B
Citation: Nm. Shmidt et al., Effect of Si doping on structural, photoluminescence and electrical properties of GaN, MAT SCI E B, 59(1-3), 1999, pp. 195-197
Behavior of electrically active point defects in irradiated MOCVD n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS
Citation: Vv. Emtsev et al., Behavior of electrically active point defects in irradiated MOCVD n-GaN, PHYSICA B, 274, 1999, pp. 101-104
Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers
Authors: Shmidt, NM Davydov, DV Emtsev, VV Krestnikov, IL Lebedev, AA Lundin, WV Poloskin, DS Sakharov, AV Usikov, AS Osinsky, AV
Citation: Nm. Shmidt et al., Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers, PHYS ST S-B, 216(1), 1999, pp. 533-536
Mosaic structure and Si doping related peculiarities of charge carrier transport in III-V nitrides
Authors: Shmidt, NM Emtsev, VV Kryzhanovsky, AS Kyutt, RN Lundin, WV Poloskin, DS Ratnikov, VV Sakharov, AV Titkov, AN Usikov, AS Girard, P
Citation: Nm. Shmidt et al., Mosaic structure and Si doping related peculiarities of charge carrier transport in III-V nitrides, PHYS ST S-B, 216(1), 1999, pp. 581-586
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