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Results: 1-25 | 26-50 | 51-57
Results: 1-25/57
Understanding of etch mechanism and etch depth distribution in inductivelycoupled plasma etching of GaAs
Authors: Lee, JW Jeon, MH Devre, M Mackenzie, KD Johnson, D Sasserath, JN Pearton, SJ Ren, F Shul, RJ
Citation: Jw. Lee et al., Understanding of etch mechanism and etch depth distribution in inductivelycoupled plasma etching of GaAs, SOL ST ELEC, 45(9), 2001, pp. 1683-1686
Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
Authors: Johnson, JW Baca, AG Briggs, RD Shul, RJ Wendt, JR Monier, C Ren, F Pearton, SJ Dabiran, AM Wowchack, AM Polley, CJ Chow, PP
Citation: Jw. Johnson et al., Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE, SOL ST ELEC, 45(12), 2001, pp. 1979-1985
Inductively coupled high-density plasma-induced etch damage of GaN MESFETs
Authors: Shul, RJ Zhang, L Baca, AG Willison, CG Han, J Pearton, SJ Lee, KP Ren, F
Citation: Rj. Shul et al., Inductively coupled high-density plasma-induced etch damage of GaN MESFETs, SOL ST ELEC, 45(1), 2001, pp. 13-17
Simulation of NPN and PNPAlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design
Authors: Monier, C Ren, F Han, J Chang, PC Shul, RJ Lee, KP Zhang, AP Baca, AG Pearton, S
Citation: C. Monier et al., Simulation of NPN and PNPAlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design, IEEE DEVICE, 48(3), 2001, pp. 427-432
A review of dry etching of GaN and related materials
Authors: Pearton, SJ Shul, RJ Ren, F
Citation: Sj. Pearton et al., A review of dry etching of GaN and related materials, MRS I J N S, 5(11), 2000, pp. 1-38
Fabrication and characterization of GaN junctionfield effect transistors
Authors: Zhang, L Lester, LF Baca, AG Shul, RJ Chang, PC Willison, CG Mishra, UK Denbaars, SP Zolper, JC
Citation: L. Zhang et al., Fabrication and characterization of GaN junctionfield effect transistors, MRS I J N S, 5, 2000, pp. NIL_322-NIL_328
Surface conversion effects in plasma-damaged p-GaN
Authors: Cao, XA Pearton, SJ Dang, GT Zhang, AP Ren, F Shul, RJ Zhang, L Hickman, R Van Hove, JM
Citation: Xa. Cao et al., Surface conversion effects in plasma-damaged p-GaN, MRS I J N S, 5, 2000, pp. NIL_481-NIL_490
High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges
Authors: Zhang, AP Dang, G Ren, F Cao, XA Cho, H Lambers, ES Pearton, SJ Shul, RJ Zhang, L Baca, AG Hickman, R Van Hove, JM
Citation: Ap. Zhang et al., High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges, MRS I J N S, 5, 2000, pp. NIL_715-NIL_720
Comparison of implant isolation species for GaN field-effect transistor structures
Authors: Dang, G Cao, XA Ren, F Pearton, SJ Han, J Baca, AG Shul, RJ Wilson, RG
Citation: G. Dang et al., Comparison of implant isolation species for GaN field-effect transistor structures, MRS I J N S, 5, 2000, pp. NIL_727-NIL_732
Inductively coupled plasma-induced etch damage of GaN p-n junctions
Authors: Shul, RJ Zhang, L Baca, AG Willison, CG Han, J Pearton, SJ Ren, F
Citation: Rj. Shul et al., Inductively coupled plasma-induced etch damage of GaN p-n junctions, J VAC SCI A, 18(4), 2000, pp. 1139-1143
Schottky diode measurements of dry etch damage in n- and p-type GaN
Authors: Cao, XA Zhang, AP Dang, GT Ren, F Pearton, SJ Shul, RJ Zhang, L
Citation: Xa. Cao et al., Schottky diode measurements of dry etch damage in n- and p-type GaN, J VAC SCI A, 18(4), 2000, pp. 1144-1148
Plasma damage in p-GaN
Authors: Cao, XA Zhang, AP Dang, GT Ren, F Pearton, SJ Van Hove, JM Hickman, RA Shul, RJ Zhang, L
Citation: Xa. Cao et al., Plasma damage in p-GaN, J ELEC MAT, 29(3), 2000, pp. 256-261
A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structures
Authors: Peake, GM Zhang, L Li, NY Sarangan, AM Willison, CG Shul, RJ Hersee, SD
Citation: Gm. Peake et al., A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structures, J ELEC MAT, 29(1), 2000, pp. 86-90
Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartI: GaAs, GaSb, and AlGaAs
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Lambers, ES Abernathy, CR Pearton, SJ Hobson, WS Shul, RJ
Citation: Yb. Hahn et al., Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartI: GaAs, GaSb, and AlGaAs, PLASMA CHEM, 20(3), 2000, pp. 405-415
Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartII: InP, InSb, InGaP, and InGaAs
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Lambers, ES Abernathy, CR Pearton, SJ Hobson, WS Shul, RJ
Citation: Yb. Hahn et al., Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartII: InP, InSb, InGaP, and InGaAs, PLASMA CHEM, 20(3), 2000, pp. 417-427
GaN/AlGaN HBT fabrication
Authors: Ren, F Han, J Hickman, R Van Hove, JM Chow, PP Klaassen, JJ LaRoche, JR Jung, KB Cho, H Cao, XA Donovan, SM Kopf, RF Wilson, RG Baca, AG Shul, RJ Zhang, L Willison, CG Abernathy, CR Pearton, SJ
Citation: F. Ren et al., GaN/AlGaN HBT fabrication, SOL ST ELEC, 44(2), 2000, pp. 239-244
Epitaxially-grown GaN junction field effect transistors
Authors: Zhang, L Lester, LF Baca, AG Shul, RJ Chang, PC Willison, CG Mishra, UK Denbaars, SP Zolper, JC
Citation: L. Zhang et al., Epitaxially-grown GaN junction field effect transistors, IEEE DEVICE, 47(3), 2000, pp. 507-511
Cl-2/Ar high-density-plasma damage in GaN Schottky diodes
Authors: Zhang, AP Dang, G Ren, F Cao, XA Cho, H Lambers, ES Pearton, SJ Shul, RJ Zhang, L Baca, AG Hickman, R Van Hove, JM
Citation: Ap. Zhang et al., Cl-2/Ar high-density-plasma damage in GaN Schottky diodes, J ELCHEM SO, 147(2), 2000, pp. 719-722
Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors
Authors: Zhang, AP Dang, GT Ren, F Han, J Baca, AG Shul, RJ Cho, H Monier, C Cao, XA Abernathy, CR Pearton, SJ
Citation: Ap. Zhang et al., Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors, APPL PHYS L, 76(20), 2000, pp. 2943-2945
Electrical effects of Ar plasma damage on GaN diode rectifiers
Authors: Dang, G Zhang, AP Cao, XA Ren, F Cho, H Pearton, SJ Shul, RJ Zhang, L Hickman, R Van Hove, JM
Citation: G. Dang et al., Electrical effects of Ar plasma damage on GaN diode rectifiers, EL SOLID ST, 2(9), 1999, pp. 472-474
Oxygen implant isolation of n-GaN field-effect transistor structures
Authors: Dang, G Cao, XA Ren, F Pearton, SJ Han, J Baca, AG Shul, RJ
Citation: G. Dang et al., Oxygen implant isolation of n-GaN field-effect transistor structures, J VAC SCI B, 17(5), 1999, pp. 2015-2018
Micromachined, reusable shadow mask for integrated optical elements grown by metalorganic chemical vapor deposition
Authors: Peake, GM Zhang, L Li, NY Sarangan, AM Willison, CG Shul, RJ Hersee, SD
Citation: Gm. Peake et al., Micromachined, reusable shadow mask for integrated optical elements grown by metalorganic chemical vapor deposition, J VAC SCI B, 17(5), 1999, pp. 2070-2073
Inductively coupled plasma damage in GaN Schottky diodes
Authors: Cao, XA Zhang, AP Dang, GT Cho, H Ren, F Pearton, SJ Shul, RJ Zhang, L Hickman, R Van Hove, JM
Citation: Xa. Cao et al., Inductively coupled plasma damage in GaN Schottky diodes, J VAC SCI B, 17(4), 1999, pp. 1540-1544
Inductively coupled plasma etching of III-V antimonides in BCl3/Ar and Cl-2/Ar
Authors: Zhang, L Lester, LF Shul, RJ Willison, CG Leavitt, RP
Citation: L. Zhang et al., Inductively coupled plasma etching of III-V antimonides in BCl3/Ar and Cl-2/Ar, J VAC SCI B, 17(3), 1999, pp. 965-969
Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl-2-Ar mixture
Authors: Hahn, YB Lee, JW Vawter, GA Shul, RJ Abernathy, CR Hays, DC Lambers, ES Pearton, SJ
Citation: Yb. Hahn et al., Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl-2-Ar mixture, J VAC SCI B, 17(2), 1999, pp. 366-371
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