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Results: 1-25 | 26-50 | 51-57
Results: 26-50/57
Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Abernathy, CR Donovan, SM Pearton, SJ Han, J Shul, RJ
Citation: Yb. Hahn et al., Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN, MAT SCI E B, 60(2), 1999, pp. 95-100
Novel plasma chemistries for highly selective dry etching of InxGaN1-x: BI3 and BBr3
Authors: Cho, H Hong, J Maeda, T Donovan, SM Abernathy, CR Pearton, SJ Shul, RJ
Citation: H. Cho et al., Novel plasma chemistries for highly selective dry etching of InxGaN1-x: BI3 and BBr3, MAT SCI E B, 59(1-3), 1999, pp. 340-344
Thermal stability of WSix and W ohmic contacts on GaN
Authors: Cao, XA Pearton, SJ Donovan, SM Abernathy, CR Ren, F Zolper, JC Cole, MW Zeitouny, A Eizenberg, M Shul, RJ Baca, AG
Citation: Xa. Cao et al., Thermal stability of WSix and W ohmic contacts on GaN, MAT SCI E B, 59(1-3), 1999, pp. 362-365
Ill-nitride dry etching: Comparison of inductively coupled plasma chemistries
Authors: Cho, H Hahn, YB Hays, DC Abernathy, CR Donovan, SM MacKenzie, JD Pearton, SJ Han, J Shul, RJ
Citation: H. Cho et al., Ill-nitride dry etching: Comparison of inductively coupled plasma chemistries, J VAC SCI A, 17(4), 1999, pp. 2202-2208
W and WSix Ohmic contacts on p- and n-type GaN
Authors: Cao, XA Ren, F Pearton, SJ Zeitouny, A Eizenberg, M Zolper, JC Abernathy, CR Han, J Shul, RJ Lothian, JR
Citation: Xa. Cao et al., W and WSix Ohmic contacts on p- and n-type GaN, J VAC SCI A, 17(4), 1999, pp. 1221-1225
Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN
Authors: Hahn, YB Hays, DC Donovan, SM Abernathy, CR Han, J Shul, RJ Cho, H Jung, KB Pearton, SJ
Citation: Yb. Hahn et al., Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN, J VAC SCI A, 17(3), 1999, pp. 768-773
Plasma chemistries for high density plasma etching of SiC
Authors: Hong, J Shul, RJ Zhang, L Lester, LF Cho, H Hahn, YB Hays, DC Jung, KB Pearton, SJ Zetterling, CM Ostling, M
Citation: J. Hong et al., Plasma chemistries for high density plasma etching of SiC, J ELEC MAT, 28(3), 1999, pp. 196-201
Redistribution of implanted dopants in GaN
Authors: Cao, XA Wilson, RG Zolper, JC Pearton, SJ Han, J Shul, RJ Rieger, DJ Singh, RK Fu, M Scarvepalli, V Sekhar, JA Zavada, JM
Citation: Xa. Cao et al., Redistribution of implanted dopants in GaN, J ELEC MAT, 28(3), 1999, pp. 261-265
UV-photoassisted etching of GaN in KOH
Authors: Cho, H Auh, KH Han, J Shul, RJ Donovan, SM Abernathy, CR Lambers, ES Ren, F Pearton, SJ
Citation: H. Cho et al., UV-photoassisted etching of GaN in KOH, J ELEC MAT, 28(3), 1999, pp. 290-294
Selective dry etching using inductively coupled plasmas Part II. InN GaN and InN AlN
Authors: Hays, DC Cho, H Jung, KB Hahn, YB Abernathy, CR Pearton, SJ Ren, F Hun, J Shul, RJ
Citation: Dc. Hays et al., Selective dry etching using inductively coupled plasmas Part II. InN GaN and InN AlN, APPL SURF S, 147(1-4), 1999, pp. 134-139
Effect of inert gas additive species on Cl-2 high density plasma etching of compound semiconductors Part I. GaAs and GaSb
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Abernathy, CR Pearton, SJ Shul, RJ
Citation: Yb. Hahn et al., Effect of inert gas additive species on Cl-2 high density plasma etching of compound semiconductors Part I. GaAs and GaSb, APPL SURF S, 147(1-4), 1999, pp. 207-214
Effect of inert gas additive species on Cl-2 high density plasma etching of compound semiconductors Part II. InP, InSb, InGaP and InGaAs
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Abernathy, CR Pearton, SJ Shul, RJ
Citation: Yb. Hahn et al., Effect of inert gas additive species on Cl-2 high density plasma etching of compound semiconductors Part II. InP, InSb, InGaP and InGaAs, APPL SURF S, 147(1-4), 1999, pp. 215-221
Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries I. GaAs, GaN, GaP, GaSb and AlGaAs
Authors: Maeda, T Lee, JW Shul, RJ Han, J Hong, J Lambers, ES Pearton, SJ Abernathy, CR Hobson, WS
Citation: T. Maeda et al., Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries I. GaAs, GaN, GaP, GaSb and AlGaAs, APPL SURF S, 143(1-4), 1999, pp. 174-182
Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries - II. InP, InGaAs, InGaAsP, InAs and AlInAs
Authors: Maeda, T Lee, JW Shul, RJ Han, J Hong, J Lambers, ES Pearton, SJ Abernathy, CR Hobson, WS
Citation: T. Maeda et al., Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries - II. InP, InGaAs, InGaAsP, InAs and AlInAs, APPL SURF S, 143(1-4), 1999, pp. 183-190
Effects of hydrogen implantation into GaN
Authors: Pearton, SJ Abernathy, CR Wilson, RG Zavada, JM Song, CY Weinstein, MG Stavola, M Han, J Shul, RJ
Citation: Sj. Pearton et al., Effects of hydrogen implantation into GaN, NUCL INST B, 147(1-4), 1999, pp. 171-174
GaN metal oxide semiconductor field effect transistors
Authors: Ren, F Pearton, SJ Abernathy, CR Baca, A Cheng, P Shul, RJ Chu, SNG Hong, M Schurman, MJ Lothian, JR
Citation: F. Ren et al., GaN metal oxide semiconductor field effect transistors, SOL ST ELEC, 43(9), 1999, pp. 1817-1820
GaN: Processing, defects, and devices
Authors: Pearton, SJ Zolper, JC Shul, RJ Ren, F
Citation: Sj. Pearton et al., GaN: Processing, defects, and devices, J APPL PHYS, 86(1), 1999, pp. 1-78
Self-aligned GaAs JFETs for low-power microwave amplifiers and RFICs at 2.4GHz
Authors: Baca, AG Hietala, VM Greenway, D Zolper, JC Dubbert, DF Sloan, LR Shul, RJ
Citation: Ag. Baca et al., Self-aligned GaAs JFETs for low-power microwave amplifiers and RFICs at 2.4GHz, ELECTR LETT, 35(4), 1999, pp. 308-309
Comparison of F-2-based gases for high-rate dry etching of Si
Authors: Hays, DC Jung, KB Hahn, YB Lambers, ES Pearton, SJ Donahue, J Johnson, D Shul, RJ
Citation: Dc. Hays et al., Comparison of F-2-based gases for high-rate dry etching of Si, J ELCHEM SO, 146(10), 1999, pp. 3812-3816
Depth and thermal stability of dry etch damage in GaN Schottky diodes
Authors: Cao, XA Cho, H Pearton, SJ Dang, GT Zhang, AP Ren, F Shul, RJ Zhang, L Hickman, R Van Hove, JM
Citation: Xa. Cao et al., Depth and thermal stability of dry etch damage in GaN Schottky diodes, APPL PHYS L, 75(2), 1999, pp. 232-234
Electrical effects of plasma damage in p-GaN
Authors: Cao, XA Pearton, SJ Zhang, AP Dang, GT Ren, F Shul, RJ Zhang, L Hickman, R Van Hove, JM
Citation: Xa. Cao et al., Electrical effects of plasma damage in p-GaN, APPL PHYS L, 75(17), 1999, pp. 2569-2571
Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
Authors: Han, J Baca, AG Shul, RJ Willison, CG Zhang, L Ren, F Zhang, AP Dang, GT Donovan, SM Cao, XA Cho, H Jung, KB Abernathy, CR Pearton, SJ Wilson, RG
Citation: J. Han et al., Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor, APPL PHYS L, 74(18), 1999, pp. 2702-2704
Electron cyclotron resonance chemical vapor deposited silicon nitride for T-gate passivation
Authors: Ren, F LaRoche, J Anderson, T Pearton, SJ Lee, JW Johnson, D Lothian, JR Lin, J Weiner, JS Shul, RJ Wu, CS
Citation: F. Ren et al., Electron cyclotron resonance chemical vapor deposited silicon nitride for T-gate passivation, EL SOLID ST, 1(6), 1998, pp. 279-281
High selectivity dry etching of InGaP over AlInP in BI3 and BBr3 plasma chemistries
Authors: Hong, J Cho, H Maeda, T Abernathy, CR Pearton, SJ Shul, RJ Hobson, WS
Citation: J. Hong et al., High selectivity dry etching of InGaP over AlInP in BI3 and BBr3 plasma chemistries, EL SOLID ST, 1(1), 1998, pp. 56-57
Inductively coupled plasma and electron cyclotron resonance plasma etchingof an InGaAlP compound semiconductor system
Authors: Hong, J Lambers, ES Abernathy, CR Pearton, SJ Shul, RJ Hobson, WS
Citation: J. Hong et al., Inductively coupled plasma and electron cyclotron resonance plasma etchingof an InGaAlP compound semiconductor system, CR R SOLID, 23(4), 1998, pp. 323-396
Risultati: 1-25 | 26-50 | 51-57