AAAAAA

   
Results: 1-11 |
Results: 11
Enhancement of compositional modulation in GaInP epilayers by the additionof surfactants during organometallic vapor phase epitaxy growth
Authors: Lee, RT Fetzer, CM Jun, SW Chapman, DC Shurtleff, JK Stringfellow, GB Ok, YW Seong, TY
Citation: Rt. Lee et al., Enhancement of compositional modulation in GaInP epilayers by the additionof surfactants during organometallic vapor phase epitaxy growth, J CRYST GR, 233(3), 2001, pp. 490-502
Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy
Authors: Jun, SW Stringfellow, GB Howard, AD Fetzer, CM Shurtleff, JK
Citation: Sw. Jun et al., Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy, J APPL PHYS, 90(12), 2001, pp. 6048-6053
Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy
Authors: Shurtleff, JK Jun, SW Stringfellow, GB
Citation: Jk. Shurtleff et al., Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy, APPL PHYS L, 78(20), 2001, pp. 3038-3040
Surfactant effects of dopants on ordering in GaInP
Authors: Stringfellow, GB Lee, RT Fetzer, CM Shurtleff, JK Hsu, Y Jun, SW Lee, S Seong, TY
Citation: Gb. Stringfellow et al., Surfactant effects of dopants on ordering in GaInP, J ELEC MAT, 29(1), 2000, pp. 134-139
Surface processes in OMVPE - the frontiers
Authors: Stringfellow, GB Shurtleff, JK Lee, RT Fetzer, CM Jun, SW
Citation: Gb. Stringfellow et al., Surface processes in OMVPE - the frontiers, J CRYST GR, 221, 2000, pp. 1-11
Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy
Authors: Jun, SW Lee, RT Fetzer, CM Shurtleff, JK Stringfellow, GB Choi, CJ Seong, TY
Citation: Sw. Jun et al., Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy, J APPL PHYS, 88(7), 2000, pp. 4429-4433
Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy
Authors: Lee, RT Shurtleff, JK Fetzer, CM Stringfellow, GB Lee, S Seong, TY
Citation: Rt. Lee et al., Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy, J APPL PHYS, 87(8), 2000, pp. 3730-3735
Heterostructures in GaInP grown using a change in Te doping
Authors: Hsu, Y Fetzer, CM Stringfellow, GB Shurtleff, JK Choi, CJ Seong, TY
Citation: Y. Hsu et al., Heterostructures in GaInP grown using a change in Te doping, J APPL PHYS, 87(11), 2000, pp. 7776-7781
Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy
Authors: Jun, SW Fetzer, CM Lee, RT Shurtleff, JK Stringfellow, GB
Citation: Sw. Jun et al., Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy, APPL PHYS L, 76(19), 2000, pp. 2716-2718
The use of a surfactant (Sb) to induce triple period ordering in GaInP
Authors: Fetzer, CM Lee, RT Shurtleff, JK Stringfellow, GB Lee, SM Seong, TY
Citation: Cm. Fetzer et al., The use of a surfactant (Sb) to induce triple period ordering in GaInP, APPL PHYS L, 76(11), 2000, pp. 1440-1442
Band-gap control of GaInP using Sb as a surfactant
Authors: Shurtleff, JK Lee, RT Fetzer, CM Stringfellow, GB
Citation: Jk. Shurtleff et al., Band-gap control of GaInP using Sb as a surfactant, APPL PHYS L, 75(13), 1999, pp. 1914-1916
Risultati: 1-11 |