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Results: 1-7 |
Results: 7
Microscopic observation of interaction between self-interstitials and In-acceptors in germanium
Authors: Sielemann, R Haesslein, H Zistl, C
Citation: R. Sielemann et al., Microscopic observation of interaction between self-interstitials and In-acceptors in germanium, PHYSICA B, 302, 2001, pp. 101-105
Tungsten in silicon carbide: Band-gap states and their polytype dependence
Authors: Achtziger, N Pasold, G Sielemann, R Hulsen, C Grillenberger, J Witthuhn, W
Citation: N. Achtziger et al., Tungsten in silicon carbide: Band-gap states and their polytype dependence, PHYS REV B, 62(19), 2000, pp. 12888-12895
Radiotracer identification of a Ta-related deep level in 4H-SiC
Authors: Grillenberger, J Achtziger, N Sielemann, R Witthuhn, W
Citation: J. Grillenberger et al., Radiotracer identification of a Ta-related deep level in 4H-SiC, J APPL PHYS, 88(6), 2000, pp. 3260-3265
The electronic configuration of substitutional Fe in silicon
Authors: Weyer, G Burchard, A Fanciulli, M Fedoseyev, VN Gunnlaugsson, HP Mishin, VI Sielemann, R
Citation: G. Weyer et al., The electronic configuration of substitutional Fe in silicon, PHYSICA B, 274, 1999, pp. 363-366
Frenkel pairs, vacancies, and self-interstitials in Ge: identification andproperties from PAC- and Moessbauer spectroscopy
Authors: Sielemann, R Haesslein, H Wende, L Zistl, C
Citation: R. Sielemann et al., Frenkel pairs, vacancies, and self-interstitials in Ge: identification andproperties from PAC- and Moessbauer spectroscopy, PHYSICA B, 274, 1999, pp. 565-569
Te-defect interaction in GaSb: donor-vacancy pair or DX-center?
Authors: Wende, L Sielemann, R Weyer, G
Citation: L. Wende et al., Te-defect interaction in GaSb: donor-vacancy pair or DX-center?, HYPER INTER, 121(1-8), 1999, pp. 365-369
Study of intrinsic defects in semiconductors with radioactive probes
Authors: Sielemann, R
Citation: R. Sielemann, Study of intrinsic defects in semiconductors with radioactive probes, NUCL INST B, 146(1-4), 1998, pp. 329-340
Risultati: 1-7 |