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Results: 1-8 |
Results: 8
Soft breakdown at all positions along the N-MOSFET
Authors: Weir, BE Alam, MA Silverman, PJ
Citation: Be. Weir et al., Soft breakdown at all positions along the N-MOSFET, MICROEL ENG, 59(1-4), 2001, pp. 17-23
Multi-component high-K gate dielectrics for the silicon industry
Authors: Manchanda, L Morris, MD Green, ML van Dover, RB Klemens, F Sorsch, TW Silverman, PJ Wilk, G Busch, B Aravamudhan, S
Citation: L. Manchanda et al., Multi-component high-K gate dielectrics for the silicon industry, MICROEL ENG, 59(1-4), 2001, pp. 351-359
Electrical properties of cobalt and copper contamination in processed silicon
Authors: Benton, JL Boone, T Jacobson, DC Silverman, PJ Rosamilia, JM Rafferty, CS Weinzierl, S Vu, B
Citation: Jl. Benton et al., Electrical properties of cobalt and copper contamination in processed silicon, J ELCHEM SO, 148(6), 2001, pp. G326-G329
Gate oxide reliability projection to the sub-2 nm regime
Authors: Weir, BE Alam, MA Bude, JD Silverman, PJ Ghetti, A Baumann, F Diodato, P Monroe, D Sorsch, T Timp, GL Ma, Y Brown, MM Hamad, A Hwang, D Mason, P
Citation: Be. Weir et al., Gate oxide reliability projection to the sub-2 nm regime, SEMIC SCI T, 15(5), 2000, pp. 455-461
Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy
Authors: Chang, JP Green, ML Donnelly, VM Opila, RL Eng, J Sapjeta, J Silverman, PJ Weir, B Lu, HC Gustafsson, T Garfunkel, E
Citation: Jp. Chang et al., Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy, J APPL PHYS, 87(9), 2000, pp. 4449-4455
Effect of tensile strain on B-type step energy on Si(001)-(2x1) surfaces determined by switch-kink counting
Authors: Heller, ER Jones, DE Pelz, JP Xie, YH Silverman, PJ
Citation: Er. Heller et al., Effect of tensile strain on B-type step energy on Si(001)-(2x1) surfaces determined by switch-kink counting, J VAC SCI A, 17(4), 1999, pp. 1663-1669
Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics forsub50 nm CMOS
Authors: Green, ML Sorsch, TW Timp, GL Muller, DA Weir, BE Silverman, PJ Moccio, SV Kim, YO
Citation: Ml. Green et al., Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics forsub50 nm CMOS, MICROEL ENG, 48(1-4), 1999, pp. 25-30
Precursor ion damage and angular dependence of single event gate rupture in thin oxides
Authors: Sexton, FW Fleetwood, DM Shaneyfelt, MR Dodd, PE Hash, GL Schanwald, LP Loemker, RA Krisch, KS Green, ML Weir, BE Silverman, PJ
Citation: Fw. Sexton et al., Precursor ion damage and angular dependence of single event gate rupture in thin oxides, IEEE NUCL S, 45(6), 1998, pp. 2509-2518
Risultati: 1-8 |