Authors: Vicet, A Nicolas, JC Genty, F Rouillard, Y Skouri, EM Baranov, AN Alibert, C

Citation: A. Vicet et al., Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 mu m, IEE P-OPTO, 147(3), 2000, pp. 172-176

Authors: Christol, P Bigenwald, P Wilk, A Joullie, A Gilard, O Carrere, H Lozes-Dupuy, F Behres, A Stein, A Kluth, J Heime, K Skouri, EM

Citation: P. Christol et al., InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region, IEE P-OPTO, 147(3), 2000, pp. 181-187

Authors: Yarekha, DA Vicet, A Perona, A Glastre, G Fraisse, B Rouillard, Y Skouri, EM Boissier, G Grech, P Joullie, A Alibert, C Baranov, AN

Citation: Da. Yarekha et al., High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers, SEMIC SCI T, 15(4), 2000, pp. 390-394

Authors: Yarekha, DA Glastre, G Perona, A Rouillard, Y Genty, F Skouri, EM Boissier, G Grech, P Joullie, A Alibert, C Baranov, AN

Citation: Da. Yarekha et al., High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wavelasers emitting near 2.3 mu m, ELECTR LETT, 36(6), 2000, pp. 537-539

Authors: Joullie, A Skouri, EM Garcia, M Grech, P Wilk, A Christol, P Baranov, AN Behres, A Kluth, J Stein, A Heime, K Heuken, M Rushworth, S Hulicius, E Simecek, T

Citation: A. Joullie et al., InAs(PSb)-based "W" quantum well laser diodes emitting near 3.3 mu m, APPL PHYS L, 76(18), 2000, pp. 2499-2501