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Results: 1-6 |
Results: 6

Authors: Kiselev, AN Perevoshchikov, VA Skupov, VD Filatov, DO
Citation: An. Kiselev et al., X-ray irradiation at subthreshold energies modifies the surface micromorphology of epitaxial silicon layers on sapphire, TECH PHYS L, 27(9), 2001, pp. 725-727

Authors: Obolenskii, SV Skupov, VD
Citation: Sv. Obolenskii et Vd. Skupov, Effect of the ion-beam-induced getters on the parameters of neutron-irradiated GaAs heterostructures, TECH PHYS L, 26(8), 2000, pp. 645-646

Authors: Demidov, ES Latysheva, ND Perevoshchikov, VA Skupov, AV Skupov, VD
Citation: Es. Demidov et al., Effect of ion irradiation on the depth profiles of microdefects in silicon, INORG MATER, 36(5), 2000, pp. 422-425

Authors: Obolenskii, SV Skupov, VD Fefelov, AG
Citation: Sv. Obolenskii et al., Observation of a long-range action effect in ion-bombarded GaAs transistorstructures, TECH PHYS L, 25(8), 1999, pp. 655-656

Authors: Perevoshchikov, VA Skupov, VD
Citation: Va. Perevoshchikov et Vd. Skupov, Long-range gettering of microdefects in silicon single crystals during theformation of porous silicon layers on their surface and ion irradiation, TECH PHYS L, 25(4), 1999, pp. 315-316

Authors: Kiselev, VK Obolenskii, SV Skupov, VD
Citation: Vk. Kiselev et al., Influence of an internal getter in silicon on the parameters of Au-Si structures, TECH PHYS, 44(6), 1999, pp. 724-725
Risultati: 1-6 |