Authors:
Kiselev, AN
Perevoshchikov, VA
Skupov, VD
Filatov, DO
Citation: An. Kiselev et al., X-ray irradiation at subthreshold energies modifies the surface micromorphology of epitaxial silicon layers on sapphire, TECH PHYS L, 27(9), 2001, pp. 725-727
Citation: Sv. Obolenskii et Vd. Skupov, Effect of the ion-beam-induced getters on the parameters of neutron-irradiated GaAs heterostructures, TECH PHYS L, 26(8), 2000, pp. 645-646
Citation: Sv. Obolenskii et al., Observation of a long-range action effect in ion-bombarded GaAs transistorstructures, TECH PHYS L, 25(8), 1999, pp. 655-656
Citation: Va. Perevoshchikov et Vd. Skupov, Long-range gettering of microdefects in silicon single crystals during theformation of porous silicon layers on their surface and ion irradiation, TECH PHYS L, 25(4), 1999, pp. 315-316