Authors: Zegrya, GG Pikhtin, NA Skrynnikov, GV Slipchenko, SO Tarasov, IS

Citation: Gg. Zegrya et al., Threshold characteristics of lambda=1.55 mu m InGaAsP/InP heterolasers, SEMICONDUCT, 35(8), 2001, pp. 962-969

Authors: Vinokurov, DA Kapitonov, VA Nikolaev, DN Stankevich, AL Lyutetskii, AV Pikhtin, NA Slipchenko, SO Sokolova, ZN Fetisova, NV Arsent'ev, IN Tarasov, IS

Citation: Da. Vinokurov et al., MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes, SEMICONDUCT, 35(11), 2001, pp. 1324-1328

Authors: Golikova, EG Kureshov, VA Leshko, AY Livshits, DA Lyutetskii, AV Nikolaev, DN Pikhtin, NA Ryaboshtan, YA Slipchenko, SO Tarasov, IS Fetisova, NV

Citation: Eg. Golikova et al., The properties of InGaAsP/InP heterolasers with step-divergent waveguides, TECH PHYS L, 26(10), 2000, pp. 913-915