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Results:
1-7
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Results: 7
Authors:
Ren, QW
Nanver, LK
Visser, CCG
Slotboom, JW
Citation: Qw. Ren et al., Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions, J MAT S-M E, 12(4-6), 2001, pp. 313-316
Authors:
van den Oever, LCM
Nanver, LK
Scholtes, TLM
van Zeijl, HW
van Noort, WD
Ren, QW
Slotboom, JW
Citation: Lcm. Van Den Oever et al., Epitaxy and device behaviour of collector-up SiGeHBTs with a partial p-type collector, SOL ST ELEC, 45(11), 2001, pp. 1899-1904
Authors:
van Noort, WD
Nanver, LK
Slotboom, JW
Citation: Wd. Van Noort et al., Arsenic-Spike epilayer technology applied to bipolar transistors, IEEE DEVICE, 48(11), 2001, pp. 2500-2505
Authors:
van Noort, WD
de Vreede, LCN
Nanver, LK
Slotboom, JW
Citation: Wd. Van Noort et al., Reduction of UHF power transistor distortion with a nonuniform collector doping profile, IEEE J SOLI, 36(9), 2001, pp. 1399-1406
Authors:
Palestri, P
Fiegna, C
Selmi, L
Peter, MS
Hurkx, GAM
Slotboom, JW
Sangiorgi, E
Citation: P. Palestri et al., A better insight into the performance of silicon BJT's featuring highly nonuniform collector doping profiles, IEEE DEVICE, 47(5), 2000, pp. 1044-1051
Authors:
van Noort, WD
Nanver, LK
Slotboom, JW
Citation: Wd. Van Noort et al., Control of arsenic doping during low temperature CVD epitaxy of silicon (100), J ELCHEM SO, 147(11), 2000, pp. 4301-4304
Authors:
de Vreede, LCN
de Graaff, HC
Willemen, JA
van Noort, W
Jos, R
Larson, LE
Slotboom, JW
Tauritz, JL
Citation: Lcn. De Vreede et al., Bipolar transistor epilayer design using the MAIDS mixed-level simulator, IEEE J SOLI, 34(9), 1999, pp. 1331-1338
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