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Citation: Mm. Sobolev et al., Study of electron capture by quantum dots using deep-level transient spectroscopy, SEMICONDUCT, 35(10), 2001, pp. 1175-1181

Authors: Sobolev, MM Kochnev, IV Lantratov, VM Bert, NA Cherkashin, NA Ledentsov, NN Bedarev, DA

Citation: Mm. Sobolev et al., Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands, SEMICONDUCT, 34(2), 2000, pp. 195-204

Authors: Sobolev, MM Kovsh, AR Ustinov, VM Egorov, AY Zhukov, AE Musikhin, YG

Citation: Mm. Sobolev et al., Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures, SEMICONDUCT, 33(2), 1999, pp. 157-164

Authors: Sobolev, MM Kochnev, IV Lantratov, VM Cherkashin, NA Emtsev, VV

Citation: Mm. Sobolev et al., Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots, PHYSICA B, 274, 1999, pp. 959-962

Authors: Sobolev, MM Kovsh, AR Ustinov, VM Egorov, AY Zhukov, AE

Citation: Mm. Sobolev et al., Metastable population of self-organized InAs GaAs quantum dots, J ELEC MAT, 28(5), 1999, pp. 491-495