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Results: 1-20 |
Results: 20
Ni tracer diffusion in the B2-compound NiAl: Influence of temperature and composition
Authors: Frank, S Divinski, SV Sodervall, U Herzig, C
Citation: S. Frank et al., Ni tracer diffusion in the B2-compound NiAl: Influence of temperature and composition, ACT MATER, 49(8), 2001, pp. 1399-1411
Thickness-dependent valence-band photoemission from thin InAs and GaAs films - art. no. 195314
Authors: Asklund, H Ilver, L Kanski, J Mankefors, S Sodervall, U Sadowski, J
Citation: H. Asklund et al., Thickness-dependent valence-band photoemission from thin InAs and GaAs films - art. no. 195314, PHYS REV B, 6319(19), 2001, pp. 5314
Pre-transition oxidation behaviour of pre-hydrided Zircaloy-2
Authors: Oskarsson, M Ahlberg, E Sodervall, U Andersson, U Pettersson, K
Citation: M. Oskarsson et al., Pre-transition oxidation behaviour of pre-hydrided Zircaloy-2, J NUCL MAT, 289(3), 2001, pp. 315-328
Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates
Authors: Sadowski, J Mathieu, R Svedlindh, P Domagala, JZ Bak-Misiuk, J Swiatek, K Karlsteen, M Kanski, J Ilver, L Asklund, H Sodervall, U
Citation: J. Sadowski et al., Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates, APPL PHYS L, 78(21), 2001, pp. 3271-3273
Structure analysis of SrTiO3/BaTiO3 strained superlattice films prepared by atomic-layer metalorganic chemical vapor deposition
Authors: Wang, ZY Oda, S Karlsteen, M Sodervall, U Willander, M
Citation: Zy. Wang et al., Structure analysis of SrTiO3/BaTiO3 strained superlattice films prepared by atomic-layer metalorganic chemical vapor deposition, JPN J A P 1, 39(7A), 2000, pp. 4164-4167
The effect of Al in plasma-assisted MBE-grown GaN
Authors: Zsebok, O Thordson, JV Zhao, QX Sodervall, U Ilver, L Andersson, TG
Citation: O. Zsebok et al., The effect of Al in plasma-assisted MBE-grown GaN, MRS I J N S, 5, 2000, pp. NIL_185-NIL_190
Characterization and performance of MOCVD grown 0.14-mu m InP-HEMTs for low voltage applications
Authors: Nawaz, M Mellberg, A Persson, SHM Zirath, H Zhao, QX Sodervall, U Willander, M
Citation: M. Nawaz et al., Characterization and performance of MOCVD grown 0.14-mu m InP-HEMTs for low voltage applications, MAT SCI E B, 74(1-3), 2000, pp. 137-142
Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping
Authors: Nur, O Karlsteen, M Sodervall, U Willander, M Patel, CJ Hernandez, C Campidelli, Y Bensahel, D Kyutt, RN
Citation: O. Nur et al., Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping, SEMIC SCI T, 15(7), 2000, pp. L25-L30
Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties
Authors: Mamutin, VV Shubina, TV Vekshin, VA Ratnikov, VV Toropov, AA Ivanov, SV Karlsteen, M Sodervall, U Willander, M
Citation: Vv. Mamutin et al., Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties, APPL SURF S, 166(1-4), 2000, pp. 87-91
Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9layers on GaAs
Authors: Zsebok, O Thordson, JV Ilver, L Sodervall, U Andersson, TG
Citation: O. Zsebok et al., Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9layers on GaAs, APPL SURF S, 166(1-4), 2000, pp. 259-262
Comparative study of RBS, SIMS and VASE for characterisation of high electron mobility transistors
Authors: Persson, L Lovestam, NG Sodervall, U Watjen, U
Citation: L. Persson et al., Comparative study of RBS, SIMS and VASE for characterisation of high electron mobility transistors, NUCL INST B, 161, 2000, pp. 482-486
Investigation of trace elements in an Al-4.8 wt.% Mg-0.3 wt.% Mn alloy
Authors: Simensen, CJ Sodervall, U
Citation: Cj. Simensen et U. Sodervall, Investigation of trace elements in an Al-4.8 wt.% Mg-0.3 wt.% Mn alloy, SURF INT AN, 30(1), 2000, pp. 309-314
GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy
Authors: Zhao, QX Zsebok, O Sodervall, U Karlsteen, M Willander, M Liu, XQ Chen, YD Lu, W Shen, SC
Citation: Qx. Zhao et al., GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy, J CRYST GR, 208(1-4), 2000, pp. 117-122
O-18 diffusion in nanocrystalline ZrO2
Authors: Brossmann, U Sodervall, U Wurschum, R Schaefer, HE
Citation: U. Brossmann et al., O-18 diffusion in nanocrystalline ZrO2, NANOSTR MAT, 12(5-8), 1999, pp. 871-874
Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers
Authors: Stolwijk, NA Bosker, G Thordson, JV Sodervall, U Andersson, TG Jager, C Jager, W
Citation: Na. Stolwijk et al., Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers, PHYSICA B, 274, 1999, pp. 685-688
Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures
Authors: Shubina, TV Mamutin, VV Vekshin, VA Ratnikov, VV Toropov, AA Sitnikova, AA Ivanov, SV Karlsteen, M Sodervall, U Willander, M Pozina, G Bergman, JP Monemar, B
Citation: Tv. Shubina et al., Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures, PHYS ST S-B, 216(1), 1999, pp. 205-209
Optical and electrical characterization of MOCVD-grown modulation-doped field effect transistors
Authors: Zhao, QX Nawaz, M Karlsteen, M Sodervall, U Willander, M Stenarson, J Zirath, H Strupinski, W
Citation: Qx. Zhao et al., Optical and electrical characterization of MOCVD-grown modulation-doped field effect transistors, SEMIC SCI T, 14(8), 1999, pp. 736-739
Plasma-assisted MBE growth of GaN and InGaN on different substrates
Authors: Mamutin, VV Sorokin, SV Jmerik, VN Shubina, TV Ratnikov, VV Ivanov, SV Kop'ev, PS Karlsteen, M Sodervall, U Willander, M
Citation: Vv. Mamutin et al., Plasma-assisted MBE growth of GaN and InGaN on different substrates, J CRYST GR, 202, 1999, pp. 346-350
Diffusion of Cd in GaAs and its correlation with self-diffusion on the Ga sublattice
Authors: Bosker, G Stolwijk, NA Mehrer, H Sodervall, U Jager, W
Citation: G. Bosker et al., Diffusion of Cd in GaAs and its correlation with self-diffusion on the Ga sublattice, J APPL PHYS, 86(2), 1999, pp. 791-799
Oxygen diffusion in ultrafine grained monoclinic ZrO2
Authors: Brossmann, U Wurschum, R Sodervall, U Schaefer, HE
Citation: U. Brossmann et al., Oxygen diffusion in ultrafine grained monoclinic ZrO2, J APPL PHYS, 85(11), 1999, pp. 7646-7654
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