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Results: 1-20 |
Results: 20
Ab initio density-functional supercell calculations of hydrogen defects incubic SiC - art. no. 245202
Authors: Aradi, B Gali, A Deak, P Lowther, JE Son, NT Janzen, E Choyke, WJ
Citation: B. Aradi et al., Ab initio density-functional supercell calculations of hydrogen defects incubic SiC - art. no. 245202, PHYS REV B, 6324(24), 2001, pp. 5202
Carbon vacancy-related defect in 4H and 6H SiC - art. no. 201201
Authors: Son, NT Hai, PN Janzen, E
Citation: Nt. Son et al., Carbon vacancy-related defect in 4H and 6H SiC - art. no. 201201, PHYS REV B, 6320(20), 2001, pp. 1201
Silicon antisite in 4H SiC - art. no. 045502
Authors: Son, NT Hai, PN Janzen, E
Citation: Nt. Son et al., Silicon antisite in 4H SiC - art. no. 045502, PHYS REV L, 8704(4), 2001, pp. 5502
Species specificity of trail pheromones of fungus-growing termites from northern Vietnam
Authors: Peppuy, A Robert, A Semon, E Bonnard, O Son, NT Bordereau, C
Citation: A. Peppuy et al., Species specificity of trail pheromones of fungus-growing termites from northern Vietnam, INSECT SOC, 48(3), 2001, pp. 245-250
Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide
Authors: Aradi, B Deak, P Son, NT Janzen, E Choyke, WJ Devaty, RP
Citation: B. Aradi et al., Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide, APPL PHYS L, 79(17), 2001, pp. 2746-2748
Optically detected cyclotron resonance investigations on 4H and 6H SiC: Band-structure and transport properties
Authors: Meyer, BK Hofmann, DM Volm, D Chen, WM Son, NT Janzen, E
Citation: Bk. Meyer et al., Optically detected cyclotron resonance investigations on 4H and 6H SiC: Band-structure and transport properties, PHYS REV B, 61(7), 2000, pp. 4844-4849
Silicon vacancy related defect in 4H and 6H SiC
Authors: Sorman, E Son, NT Chen, WM Kordina, O Hallin, C Janzen, E
Citation: E. Sorman et al., Silicon vacancy related defect in 4H and 6H SiC, PHYS REV B, 61(4), 2000, pp. 2613-2620
Hole effective masses in 4H SiC
Authors: Son, NT Hai, PN Chen, WM Hallin, C Monemar, B Janzen, E
Citation: Nt. Son et al., Hole effective masses in 4H SiC, PHYS REV B, 61(16), 2000, pp. 10544-10546
Overcoordinated hydrogens in the carbon vacancy: Donor centers of SiC
Authors: Gali, A Aradi, B Deak, P Choyke, WJ Son, NT
Citation: A. Gali et al., Overcoordinated hydrogens in the carbon vacancy: Donor centers of SiC, PHYS REV L, 84(21), 2000, pp. 4926-4929
Extensions of holomorphic maps through hypersurfaces and relations to the Hartogs extensions in infinite dimension
Authors: Thai, DD Son, NT
Citation: Dd. Thai et Nt. Son, Extensions of holomorphic maps through hypersurfaces and relations to the Hartogs extensions in infinite dimension, P AM MATH S, 128(3), 2000, pp. 745-754
Prevalence of chronic otitis media in a randomly selected population from two communes in southern Vietnam
Authors: Balle, VH Tos, M Son, DH Son, NT Tri, L Phoung, TK Mai, TTT Tien, VM
Citation: Vh. Balle et al., Prevalence of chronic otitis media in a randomly selected population from two communes in southern Vietnam, ACT OTO-LAR, 2000, pp. 51-53
Carbon-vacancy related defects in 4H-and 6H-SIC
Authors: Son, NT Chen, WM Lindstrom, JL Monemar, B Janzen, E
Citation: Nt. Son et al., Carbon-vacancy related defects in 4H-and 6H-SIC, MAT SCI E B, 61-2, 1999, pp. 202-206
Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC
Authors: Son, NT Hai, PN Huy, PT Gregorkiewicz, T Ammerlaan, CAJ Lindstrom, JL Chen, WM Monemar, B Janzen, E
Citation: Nt. Son et al., Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC, PHYSICA B, 274, 1999, pp. 655-658
A complex defect related to the carbon vacancy in 4H and 6H SiC
Authors: Son, NT Chen, WM Lindstrom, JL Monemar, B Janzen, E
Citation: Nt. Son et al., A complex defect related to the carbon vacancy in 4H and 6H SiC, PHYS SCR, T79, 1999, pp. 46-49
Configuration transformation of metastable defects in 6H-SiC
Authors: Hemmingsson, CG Son, NT Kordina, O Lindstrom, JL Janzen, E
Citation: Cg. Hemmingsson et al., Configuration transformation of metastable defects in 6H-SiC, SEMIC SCI T, 14(3), 1999, pp. 251-256
Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC
Authors: Son, NT Hai, PN Wagner, M Chen, WM Ellison, A Hallin, C Monemar, B Janzen, E
Citation: Nt. Son et al., Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC, SEMIC SCI T, 14(12), 1999, pp. 1141-1146
Negative-U centers in 4H silicon carbide (vol 58, pg R10119, 1998)
Authors: Hemmingsson, CG Son, NT Ellison, A Zhang, J Janzen, E
Citation: Cg. Hemmingsson et al., Negative-U centers in 4H silicon carbide (vol 58, pg R10119, 1998), PHYS REV B, 59(11), 1999, pp. 7768-7768
Liquid phase epitaxial growth of SiC
Authors: Syvajarvi, M Yakimova, R Radamson, HH Son, NT Wahab, Q Ivanov, IG Janzen, E
Citation: M. Syvajarvi et al., Liquid phase epitaxial growth of SiC, J CRYST GR, 197(1-2), 1999, pp. 147-154
Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC
Authors: Son, NT Ellison, A Magnusson, B MacMillan, MF Chen, WM Monemar, B Janzen, E
Citation: Nt. Son et al., Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC, J APPL PHYS, 86(8), 1999, pp. 4348-4353
Observation of negative-U centers in 6H silicon carbide
Authors: Hemmingsson, CG Son, NT Janzen, E
Citation: Cg. Hemmingsson et al., Observation of negative-U centers in 6H silicon carbide, APPL PHYS L, 74(6), 1999, pp. 839-841
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