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Results: 1-25 | 26-50 | 51-56 |
Results: 51-56/56
Near-threshold gain mechanisms in GaN thin films in the temperature range of 20-700 K
Authors: Bidnyk, S Schmidt, TJ Little, BD Song, JJ
Citation: S. Bidnyk et al., Near-threshold gain mechanisms in GaN thin films in the temperature range of 20-700 K, APPL PHYS L, 74(1), 1999, pp. 1-3
Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells
Authors: Schmidt, TJ Cho, YH Gainer, GH Song, JJ Keller, S Mishra, UK DenBaars, SP
Citation: Tj. Schmidt et al., Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells, APPL PHYS L, 73(5), 1999, pp. 560-562
Enhanced adhesion buffer layer for deep x-ray lithography using hard x rays
Authors: De Carlo, F Song, JJ Mancini, DC
Citation: F. De Carlo et al., Enhanced adhesion buffer layer for deep x-ray lithography using hard x rays, J VAC SCI B, 16(6), 1998, pp. 3539-3542
Growth and in situ monitoring of GaN using IR interference effects
Authors: Considine, L Thrush, EJ Crawley, JA Jacobs, K Van der Stricht, W Moerman, I Demeester, P Park, GH Hwang, SJ Song, JJ
Citation: L. Considine et al., Growth and in situ monitoring of GaN using IR interference effects, J CRYST GR, 195(1-4), 1998, pp. 192-198
Recombination dynamics in n-AlxGa1-xAs/n-In0.5Ga0.5P type-II heterostructures
Authors: Cho, YH Song, JJ Lim, H Choe, BD Lee, JI Kim, D
Citation: Yh. Cho et al., Recombination dynamics in n-AlxGa1-xAs/n-In0.5Ga0.5P type-II heterostructures, APPL PHYS L, 73(9), 1998, pp. 1245-1247
Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence
Authors: Schmidt, TJ Bidnyk, S Cho, YH Fischer, AJ Song, JJ Keller, S Mishra, UK DenBaars, SP
Citation: Tj. Schmidt et al., Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence, APPL PHYS L, 73(25), 1998, pp. 3689-3691
Risultati: 1-25 | 26-50 | 51-56 |