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Results: 1-9 |
Results: 9
Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy
Authors: Spruytte, SG Larson, MC Wampler, W Coldren, CW Petersen, HE Harris, JS
Citation: Sg. Spruytte et al., Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 506-515
Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grownby molecular beam epitaxy
Authors: Krispin, P Spruytte, SG Harris, JS Ploog, KH
Citation: P. Krispin et al., Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grownby molecular beam epitaxy, J APPL PHYS, 90(5), 2001, pp. 2405-2410
Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal
Authors: Spruytte, SG Coldren, CW Harris, JS Wampler, W Krispin, P Ploog, K Larson, MC
Citation: Sg. Spruytte et al., Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal, J APPL PHYS, 89(8), 2001, pp. 4401-4406
Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy
Authors: Krispin, P Spruytte, SG Harris, JS Ploog, KH
Citation: P. Krispin et al., Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy, J APPL PHYS, 89(11), 2001, pp. 6294-6301
MBE growth of nitride-arsenide materials for long wavelength opto-electronics
Authors: Spruytte, SG Coldren, CW Marshall, AF Larson, MC Harris, JS
Citation: Sg. Spruytte et al., MBE growth of nitride-arsenide materials for long wavelength opto-electronics, MRS I J N S, 5, 2000, pp. NIL_407-NIL_412
Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy
Authors: Coldren, CW Spruytte, SG Harris, JS Larson, MC
Citation: Cw. Coldren et al., Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1480-1483
Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers
Authors: Larson, MC Coldren, CW Spruytte, SG Petersen, HE Harris, JS
Citation: Mc. Larson et al., Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers, IEEE PHOTON, 12(12), 2000, pp. 1598-1600
Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance-voltage measurements
Authors: Krispin, P Spruytte, SG Harris, JS Ploog, KH
Citation: P. Krispin et al., Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance-voltage measurements, J APPL PHYS, 88(7), 2000, pp. 4153-4158
1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions
Authors: Coldren, CW Larson, MC Spruytte, SG Harris, JS
Citation: Cw. Coldren et al., 1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions, ELECTR LETT, 36(11), 2000, pp. 951-952
Risultati: 1-9 |