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Results: 1-11 |
Results: 11
Light emission from interface traps and bulk defects in SiC MOSFETs
Authors: Stahlbush, RE Macfarlane, PJ
Citation: Re. Stahlbush et Pj. Macfarlane, Light emission from interface traps and bulk defects in SiC MOSFETs, J ELEC MAT, 30(3), 2001, pp. 188-195
Light emission from 4H SiC MOSFETs with and without NO passivation
Authors: Stahlbush, RE Macfarlane, PJ Williams, JR Chung, GY Feldman, LC McDonald, K
Citation: Re. Stahlbush et al., Light emission from 4H SiC MOSFETs with and without NO passivation, MICROEL ENG, 59(1-4), 2001, pp. 393-398
Trapping dependent H+ motion in SIMOX buried oxides
Authors: Macfarlane, PJ Stahlbush, RE
Citation: Pj. Macfarlane et Re. Stahlbush, Trapping dependent H+ motion in SIMOX buried oxides, MICROEL ENG, 59(1-4), 2001, pp. 503-508
Hydrogen in buried SiO2 layers
Authors: Revesz, AG Stahlbush, RE Hughes, HL
Citation: Ag. Revesz et al., Hydrogen in buried SiO2 layers, J ELCHEM SO, 147(11), 2000, pp. 4279-4281
Near interface H+ trapping and its influence on H+ transport in hydrogenated Unibond buried oxides
Authors: Macfarlane, PJ Stahlbush, RE
Citation: Pj. Macfarlane et Re. Stahlbush, Near interface H+ trapping and its influence on H+ transport in hydrogenated Unibond buried oxides, APPL PHYS L, 77(19), 2000, pp. 3081-3083
Effect of oxidation and reoxidation on the oxide-substrate interface of 4H-and 6H-SiC
Authors: Jernigan, GG Stahlbush, RE Saks, NS
Citation: Gg. Jernigan et al., Effect of oxidation and reoxidation on the oxide-substrate interface of 4H-and 6H-SiC, APPL PHYS L, 77(10), 2000, pp. 1437-1439
The effects of radiation-induced defects on H+ transport in SiO2
Authors: Stahlbush, RE
Citation: Re. Stahlbush, The effects of radiation-induced defects on H+ transport in SiO2, MICROEL ENG, 48(1-4), 1999, pp. 215-218
The effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films
Authors: Zvanut, ME Chun, W Stahlbush, RE
Citation: Me. Zvanut et al., The effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films, MICROEL ENG, 48(1-4), 1999, pp. 347-350
Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy
Authors: Nishikawa, H Stahlbush, RE Stathis, JH
Citation: H. Nishikawa et al., Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy, PHYS REV B, 60(23), 1999, pp. 15910-15918
Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)
Authors: Jernigan, GG Stahlbush, RE Das, MK Cooper, JA Lipkin, LA
Citation: Gg. Jernigan et al., Interfacial differences between SiO2 grown on 6H-SiC and on Si(100), APPL PHYS L, 74(10), 1999, pp. 1448-1450
H+ motion in SiO2: Incompatible results from hydrogen-annealing and radiation models
Authors: Stahlbush, RE Lawrence, RK Hughes, HL
Citation: Re. Stahlbush et al., H+ motion in SiO2: Incompatible results from hydrogen-annealing and radiation models, IEEE NUCL S, 45(6), 1998, pp. 2398-2407
Risultati: 1-11 |