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Results:
1-7
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Results: 7
Authors:
Starikov, D
Boney, C
Berishev, I
Hernandez, IC
Bensaoula, A
Citation: D. Starikov et al., Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications, J VAC SCI B, 19(4), 2001, pp. 1404-1408
Authors:
Starikov, D
Berishev, I
Um, JW
Badi, N
Medelci, N
Tempez, A
Bensaoula, A
Citation: D. Starikov et al., Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum, J VAC SCI B, 18(6), 2000, pp. 2620-2623
Authors:
Medelci, N
Tempez, A
Starikov, D
Badi, N
Berishev, I
Bensaoula, A
Citation: N. Medelci et al., Etch characteristics of GaN and BN materials in chlorine-based plasmas, J ELEC MAT, 29(9), 2000, pp. 1079-1083
Authors:
Tempez, A
Medelci, N
Badi, N
Berishev, I
Starikov, D
Bensaoula, A
Citation: A. Tempez et al., Photoenhanced reactive ion etching of III-V nitrides in BCl3/Cl-2/Ar/N-2 plasmas, J VAC SCI A, 17(4), 1999, pp. 2209-2213
Authors:
Badi, N
Tempez, A
Starikov, D
Bensaoula, A
Ageev, VP
Karabutov, A
Ugarov, MV
Frolov, V
Loubnin, E
Waters, K
Shultz, A
Citation: N. Badi et al., Field emission from as-grown and surface modified BN and CN thin films, J VAC SCI A, 17(4), 1999, pp. 1191-1195
Authors:
Starikov, D
Badi, N
Berishev, I
Medelci, N
Kameli, O
Sayhi, M
Zomorrodian, V
Bensaoula, A
Citation: D. Starikov et al., Metal-insulator-semiconductor Schottky barrier structures fabricated usinginterfacial BN layers grown on GaN and SiC for optoelectronic device applications, J VAC SCI A, 17(4), 1999, pp. 1235-1238
Authors:
Ageev, V
Klimentov, S
Ugarov, M
Loubnin, E
Bensaoula, A
Badi, N
Tempez, A
Starikov, D
Citation: V. Ageev et al., Enhanced free carrier generation in boron nitride films by pulsed laser radiation, APPL SURF S, 139, 1999, pp. 364-369
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