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Results:
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Results: 8
N-type porous silicon doping using phosphorous oxychloride (POCl3)
Authors:
El-Bahar, A Stolyarova, S Nemirovsky, Y
Citation:
A. El-bahar et al., N-type porous silicon doping using phosphorous oxychloride (POCl3), IEEE ELEC D, 21(9), 2000, pp. 436-438
Long-range order in CdZnTe epilayers
Authors:
Amir, N Cohen, K Stolyarova, S Chack, A Beserman, R Nemirovsky, Y
Citation:
N. Amir et al., Long-range order in CdZnTe epilayers, J PHYS D, 33(2), 2000, pp. L9-L12
Enhancement of porous silicon photoluminescence by NF3/UV photo-thermal surface treatment
Authors:
Stolyarova, S El-Bahar, A Nemirovsky, Y
Citation:
S. Stolyarova et al., Enhancement of porous silicon photoluminescence by NF3/UV photo-thermal surface treatment, J PHYS D, 33(17), 2000, pp. L90-L92
Valence band splitting in Cd(1-x)ZnxTe epilayers (vol 336, pg 205, 1998)
Authors:
Cohen, K Beserman, R Stolyarova, S Weil, R Nemirovsky, Y
Citation:
K. Cohen et al., Valence band splitting in Cd(1-x)ZnxTe epilayers (vol 336, pg 205, 1998), THIN SOL FI, 342(1-2), 1999, pp. 318-318
Rapid thermal processing of epitaxial II-VI heterostructures
Authors:
Stolyarova, S Amir, N Nemirovsky, Y
Citation:
S. Stolyarova et al., Rapid thermal processing of epitaxial II-VI heterostructures, J CRYST GR, 199, 1999, pp. 1157-1161
MOCVD growth of ordered Cd(1-x)ZnxTe epilayers
Authors:
Cohen, K Stolyarova, S Amir, N Chack, A Beserman, R Weil, R Nemirovsky, Y
Citation:
K. Cohen et al., MOCVD growth of ordered Cd(1-x)ZnxTe epilayers, J CRYST GR, 199, 1999, pp. 1174-1178
Dielectric and pyroelectric properties of ordered CdZnTe layers grown by MOCVD
Authors:
Chack, A Cohen, K Stolyarova, S Nemirovsky, Y Beserman, R Weil, R
Citation:
A. Chack et al., Dielectric and pyroelectric properties of ordered CdZnTe layers grown by MOCVD, J CRYST GR, 199, 1999, pp. 1179-1183
Valence band splitting in Cd(1-x)ZnxTe epilayers
Authors:
Cohen, K Beserman, R Stolyarova, S Weil, R Nemirovsky, Y
Citation:
K. Cohen et al., Valence band splitting in Cd(1-x)ZnxTe epilayers, THIN SOL FI, 336(1-2), 1998, pp. 205-207
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