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Results: 1-17 |
Results: 17
High performance InP high electron mobility transistors by valved phosphorus cracker
Authors: Chin, TP Chen, YC Barsky, M Wojtowicz, M Grundbacher, R Lai, R Streit, DC Block, TR
Citation: Tp. Chin et al., High performance InP high electron mobility transistors by valved phosphorus cracker, J VAC SCI B, 18(3), 2000, pp. 1642-1644
Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers
Authors: Goorsky, MS Sandhu, R Hsing, R Naidenkova, M Wojtowicz, M Chin, TP Block, TR Streit, DC
Citation: Ms. Goorsky et al., Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers, J VAC SCI B, 18(3), 2000, pp. 1658-1662
Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation
Authors: Chen, TH Huang, YS Lin, DY Pollak, FH Goorsky, MS Streit, DC Wojtowicz, M
Citation: Th. Chen et al., Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation, J APPL PHYS, 88(2), 2000, pp. 883-888
A DC-20-GHz InPHBT balanced analog multiplier for high-data-rate direct-digital modulation and fiber-optic receiver applications
Authors: Kobayashi, KW Desrosiers, RM Gutierrez-Aitken, A Cowles, JC Tang, B Tran, LT Block, TR Oki, AK Streit, DC
Citation: Kw. Kobayashi et al., A DC-20-GHz InPHBT balanced analog multiplier for high-data-rate direct-digital modulation and fiber-optic receiver applications, IEEE MICR T, 48(2), 2000, pp. 194-202
InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker
Authors: Chin, TP Gutierrez-Aitken, AL Cowles, J Kaneshiro, EN Han, AC Block, TR Oki, AK Streit, DC
Citation: Tp. Chin et al., InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker, J VAC SCI B, 17(3), 1999, pp. 1136-1138
Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs
Authors: Sandhu, RS Bhasin, G Moore, CD U'Ren, GD Goorsky, MS Chin, TP Wojtowicz, M Block, TR Streit, DC
Citation: Rs. Sandhu et al., Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs, J VAC SCI B, 17(3), 1999, pp. 1163-1166
Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl-2/BCl3/Ar plasmas
Authors: Nordheden, KJ Hua, XD Lee, YS Yang, LW Streit, DC Yen, HC
Citation: Kj. Nordheden et al., Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl-2/BCl3/Ar plasmas, J VAC SCI B, 17(1), 1999, pp. 138-144
160-190-GHz monolithic low-noise amplifiers
Authors: Kok, YL Wang, H Huang, TW Lai, R Barsky, M Chen, YC Sholley, M Block, T Streit, DC Liu, PH Allen, BR Samoska, L Gaier, T
Citation: Yl. Kok et al., 160-190-GHz monolithic low-noise amplifiers, IEEE MICR G, 9(8), 1999, pp. 311-313
Indium phosphide heterojunction bipolar transistor technology for future telecommunications applications
Authors: Kobayashi, KW Oki, AK Streit, DC
Citation: Kw. Kobayashi et al., Indium phosphide heterojunction bipolar transistor technology for future telecommunications applications, MICROWAVE J, 42(7), 1999, pp. 74
Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence
Authors: Han, AC Wojtowicz, M Block, TR Zhang, X Chin, TP Cavus, A Oki, A Streit, DC
Citation: Ac. Han et al., Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence, J APPL PHYS, 86(11), 1999, pp. 6160-6163
A 44-GHz-high IP3InPHBT MMIC amplifier for low DC power millimeter-wave receiver applications
Authors: Kobayashi, KW Cowles, JC Tran, LT Gutierrez-Aitken, A Nishimoto, M Elliott, JH Block, TR Oki, AK Streit, DC
Citation: Kw. Kobayashi et al., A 44-GHz-high IP3InPHBT MMIC amplifier for low DC power millimeter-wave receiver applications, IEEE J SOLI, 34(9), 1999, pp. 1188-1195
A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth
Authors: Kobayashi, KW Oki, AK Tran, LT Cowles, JC Gutierrez-Aitken, A Yamada, F Block, TR Streit, DC
Citation: Kw. Kobayashi et al., A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth, IEEE J SOLI, 34(9), 1999, pp. 1225-1232
LT-GaAs detector with 451fs response at 1.55 mu m via two-photon absorption
Authors: Erlig, H Wang, S Azfar, T Udupa, A Fetterman, HR Streit, DC
Citation: H. Erlig et al., LT-GaAs detector with 451fs response at 1.55 mu m via two-photon absorption, ELECTR LETT, 35(2), 1999, pp. 173-174
Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor
Authors: Mishori, B Leibovitch, M Shapira, Y Pollak, FH Streit, DC Wojtowicz, M
Citation: B. Mishori et al., Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor, APPL PHYS L, 73(5), 1999, pp. 650-652
An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz
Authors: Lai, R Barsky, M Huang, T Sholley, M Wang, H Kok, YL Streit, DC Block, T Liu, PH Gaier, T Samoska, L
Citation: R. Lai et al., An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz, IEEE MICR G, 8(11), 1998, pp. 393-395
A 95-GHz InP HEMT MMIC amplifier with 427-mW power output
Authors: Chen, YC Ingram, DL Lai, R Barsky, M Grunbacher, R Block, T Yen, HC Streit, DC
Citation: Yc. Chen et al., A 95-GHz InP HEMT MMIC amplifier with 427-mW power output, IEEE MICR G, 8(11), 1998, pp. 399-401
A 44-GHz high IP3 InP-HBT amplifier with practical current reuse biasing
Authors: Kobayashi, KW Nishimoto, M Tran, LT Wang, H Cowles, JC Block, TR Elliott, JH Allen, BR Oki, AK Streit, DC
Citation: Kw. Kobayashi et al., A 44-GHz high IP3 InP-HBT amplifier with practical current reuse biasing, IEEE MICR T, 46(12), 1998, pp. 2541-2552
Risultati: 1-17 |