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Results:
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Results: 13
Authors:
Wirth, R
Karnutsch, C
Kugler, S
Streubel, K
Citation: R. Wirth et al., High-efficiency resonant-cavity LEDs emitting at 650 nm, IEEE PHOTON, 13(5), 2001, pp. 421-423
Authors:
Pursiainen, O
Linder, N
Jaeger, A
Oberschmid, R
Streubel, K
Citation: O. Pursiainen et al., Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes, APPL PHYS L, 79(18), 2001, pp. 2895-2897
Authors:
Zwiller, V
Chitica, N
Persson, J
Pistol, ME
Seifert, W
Samuelson, L
Hammar, M
Streubel, K
Goobar, E
Bjork, G
Citation: V. Zwiller et al., Studies of self-assembled InP quantum dots in planar microcavities, MAT SCI E B, 69, 2000, pp. 314-317
Authors:
Streubel, K
Hammar, M
Salomonsson, F
Bentell, J
Mogg, S
Rapp, S
Jacquet, J
Boucart, J
Stark, C
Plais, A
Gaborit, F
Derouin, E
Bouche, N
Rudra, A
Syrbu, AV
Iakovlev, VP
Berseth, CA
Dehaese, O
Kapon, E
Moussa, H
Sagnes, I
Citation: K. Streubel et al., Novel technologies for 1.55-mu m vertical cavity lasers, OPT ENG, 39(2), 2000, pp. 488-497
On-wafer determination of intrinsic spontaneous spectrum of vertical cavity surface-emitting devices
Authors:
Royo, P
Stanley, RP
Ilegems, M
Streubel, K
Gulden, KH
Citation: P. Royo et al., On-wafer determination of intrinsic spontaneous spectrum of vertical cavity surface-emitting devices, ELECTR LETT, 36(25), 2000, pp. 2106-2108
Authors:
Royo, P
Stanley, RP
Ilegems, M
Streubel, K
Gulden, KH
Citation: P. Royo et al., Deconvolution of the intrinsic spontaneous spectrum of vertical-cavity surface-emitting devices, APPL PHYS L, 77(24), 2000, pp. 3899-3901
Authors:
Hammar, M
Wennekes, F
Salomonsson, F
Bentell, J
Streubel, K
Rapp, S
Keiper, D
Westphalen, R
Citation: M. Hammar et al., Systematics of electrical conductivity across InP to GaAs wafer-fused interfaces, JPN J A P 1, 38(2B), 1999, pp. 1111-1114
Authors:
Rapp, S
Salomonsson, F
Streubel, K
Mogg, S
Wennekes, F
Bentell, J
Hammar, M
Citation: S. Rapp et al., All-epitaxial single-fused 1.55 mu m vertical cavity laser based on an InPBragg reflector, JPN J A P 1, 38(2B), 1999, pp. 1261-1264
Authors:
Chitica, N
Daleiden, J
Strassner, M
Streubel, K
Citation: N. Chitica et al., Monolithic InP-Based tunable filter with 10-nm bandwidth for optical data interconnects in the 1550-nm band, IEEE PHOTON, 11(5), 1999, pp. 584-586
Authors:
Eriksson, U
Evaldsson, P
Streubel, K
Citation: U. Eriksson et al., Fabrication of a 1.55-mu m VCSEL and an InGaAsP-InP HBT from a common epitaxial structure, IEEE PHOTON, 11(4), 1999, pp. 403-405
Authors:
Salomonsson, F
Rapp, S
Streubel, K
Hammar, M
Daleiden, J
Citation: F. Salomonsson et al., InP-based 1.55 mu m resonant cavity light-emitting diode with two epitaxial mirrors, PHYS SCR, T79, 1999, pp. 135-137
Authors:
Bentell, J
Wennekes, F
Salomonsson, F
Hammar, M
Streubel, K
Citation: J. Bentell et al., Characterisation of n-InP/n-GaAs wafer fused heterojunctions, PHYS SCR, T79, 1999, pp. 206-208
Authors:
Rapp, S
Salomonsson, F
Bentell, J
Sagnes, I
Moussa, H
Meriadec, C
Raj, R
Streubel, K
Hammar, M
Citation: S. Rapp et al., Near room-temperature continuous-wave operation of electrically pumped 1.55 mu m vertical cavity lasers with InGaAsP/InP bottom mirror, ELECTR LETT, 35(1), 1999, pp. 49-50
Risultati:
1-13
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