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Results: 26-34/34
Authors:
Markevich, VP
Murin, LI
Suezawa, M
Lindstrom, JL
Coutinho, J
Jones, R
Briddon, PR
Oberg, S
Citation: Vp. Markevich et al., Local vibrational mode bands of V-O-H complexes in silicon, PHYSICA B, 274, 1999, pp. 300-304
Authors:
Mchedlidze, T
Matsumoto, K
Lin, TC
Suezawa, M
Citation: T. Mchedlidze et al., Dependence of electrically detected magnetic resonance signal shape from iron-contaminated silicon wafers on the thermal treatment of the samples, PHYSICA B, 274, 1999, pp. 404-407
Authors:
Takahashi, T
Suezawa, M
Citation: T. Takahashi et M. Suezawa, ESR study of Fe-H complexes in Si, PHYSICA B, 274, 1999, pp. 445-448
Authors:
Watanabe, M
Watanabe, A
Suezawa, M
Citation: M. Watanabe et al., Photoluminescence of highly compensated GaAs doped with high concentrationof Ge, PHYSICA B, 274, 1999, pp. 750-753
Authors:
Suezawa, M
Citation: M. Suezawa, Thermal properties of H-related complexes in electron-irradiated Si doped with H, J APPL PHYS, 86(9), 1999, pp. 4865-4870
Authors:
Fukata, N
Suezawa, M
Citation: N. Fukata et M. Suezawa, Formation energy of self-interstitials in carbon-doped Si determined by optical absorption due to hydrogen bound to self-interstitials, J APPL PHYS, 86(4), 1999, pp. 1848-1853
Authors:
Suezawa, M
Mori, R
Citation: M. Suezawa et R. Mori, Optical absorption study of the interaction between group II acceptors andhydrogen in Si, PHYS ST S-B, 210(2), 1998, pp. 507-511
Authors:
Markevich, VP
Mchedlidze, T
Suezawa, M
Murin, LI
Citation: Vp. Markevich et al., EPR study of hydrogen-related radiation-induced shallow donors in silicon, PHYS ST S-B, 210(2), 1998, pp. 545-549
Authors:
Takahashi, H
Fukata, N
Suezawa, M
Yamada-Kaneta, H
Citation: H. Takahashi et al., Optical absorption lines due to H-2-related defects in Si, PHYS ST S-B, 210(2), 1998, pp. 581-586