Authors:
Kikuchi, A
Yamada, T
Nakamura, S
Kusakabe, K
Sugihara, D
Kishino, K
Citation: A. Kikuchi et al., Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AlN intermediate layer, MAT SCI E B, 82(1-3), 2001, pp. 12-15
Authors:
Kusakabe, K
Kishino, K
Kikuchi, A
Yamada, T
Sugihara, D
Nakamura, S
Citation: K. Kusakabe et al., Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer, J CRYST GR, 230(3-4), 2001, pp. 387-391
Authors:
Kikuchi, A
Yamada, T
Nakamura, S
Kusakabe, K
Sugihara, D
Kishino, K
Citation: A. Kikuchi et al., Improvement of crystal quality of rf-plasma-assisted molecular beam epitaxy grown Ga-polarity GaN by high-temperature grown AlN multiple intermediatelayers, JPN J A P 2, 39(4B), 2000, pp. L330-L333
Authors:
Sugihara, D
Kikuchi, A
Kusakabe, K
Nakamura, S
Toyoura, Y
Yamada, T
Kishino, K
Citation: D. Sugihara et al., High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy, JPN J A P 2, 39(3AB), 2000, pp. L197-L199
Authors:
Sugihara, D
Kikuchi, A
Kusakabe, K
Nakamura, S
Toyoura, Y
Yamada, T
Kishino, K
Citation: D. Sugihara et al., Suppression of inversion domains and decrease of threading dislocations inmigration enhanced epitaxial GaN by RF-molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 65-71
Authors:
Nakamura, S
Kikuchi, A
Kusakabe, K
Sugihara, D
Toyoura, Y
Yamada, T
Kishino, K
Citation: S. Nakamura et al., InGaN/GaN MQW and Mg-doped GaN growth using a shutter control method by RF-molecular beam epitaxy, PHYS ST S-A, 176(1), 1999, pp. 273-277
Authors:
Sugihara, D
Kikuchi, A
Kusakabe, K
Nakamura, S
Toyoura, Y
Yamada, T
Kishino, K
Citation: D. Sugihara et al., 2.6 mu m/h high-speed growth of GaN by RF-molecular beam epitaxy and improvement of crystal quality by migration enhanced epitaxy, PHYS ST S-A, 176(1), 1999, pp. 323-328