AAAAAA

   
Results: 1-8 |
Results: 8
Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AlN intermediate layer
Authors: Kikuchi, A Yamada, T Nakamura, S Kusakabe, K Sugihara, D Kishino, K
Citation: A. Kikuchi et al., Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AlN intermediate layer, MAT SCI E B, 82(1-3), 2001, pp. 12-15
Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer
Authors: Kusakabe, K Kishino, K Kikuchi, A Yamada, T Sugihara, D Nakamura, S
Citation: K. Kusakabe et al., Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer, J CRYST GR, 230(3-4), 2001, pp. 387-391
Improvement of crystal quality of rf-plasma-assisted molecular beam epitaxy grown Ga-polarity GaN by high-temperature grown AlN multiple intermediatelayers
Authors: Kikuchi, A Yamada, T Nakamura, S Kusakabe, K Sugihara, D Kishino, K
Citation: A. Kikuchi et al., Improvement of crystal quality of rf-plasma-assisted molecular beam epitaxy grown Ga-polarity GaN by high-temperature grown AlN multiple intermediatelayers, JPN J A P 2, 39(4B), 2000, pp. L330-L333
High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy
Authors: Sugihara, D Kikuchi, A Kusakabe, K Nakamura, S Toyoura, Y Yamada, T Kishino, K
Citation: D. Sugihara et al., High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy, JPN J A P 2, 39(3AB), 2000, pp. L197-L199
Suppression of inversion domains and decrease of threading dislocations inmigration enhanced epitaxial GaN by RF-molecular beam epitaxy
Authors: Sugihara, D Kikuchi, A Kusakabe, K Nakamura, S Toyoura, Y Yamada, T Kishino, K
Citation: D. Sugihara et al., Suppression of inversion domains and decrease of threading dislocations inmigration enhanced epitaxial GaN by RF-molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 65-71
High speed growth of device quality GaN and InGaN by RF-MBE
Authors: Kushi, K Sasamoto, H Sugihara, D Nakamura, S Kikuchi, A Kishino, K
Citation: K. Kushi et al., High speed growth of device quality GaN and InGaN by RF-MBE, MAT SCI E B, 59(1-3), 1999, pp. 65-68
InGaN/GaN MQW and Mg-doped GaN growth using a shutter control method by RF-molecular beam epitaxy
Authors: Nakamura, S Kikuchi, A Kusakabe, K Sugihara, D Toyoura, Y Yamada, T Kishino, K
Citation: S. Nakamura et al., InGaN/GaN MQW and Mg-doped GaN growth using a shutter control method by RF-molecular beam epitaxy, PHYS ST S-A, 176(1), 1999, pp. 273-277
2.6 mu m/h high-speed growth of GaN by RF-molecular beam epitaxy and improvement of crystal quality by migration enhanced epitaxy
Authors: Sugihara, D Kikuchi, A Kusakabe, K Nakamura, S Toyoura, Y Yamada, T Kishino, K
Citation: D. Sugihara et al., 2.6 mu m/h high-speed growth of GaN by RF-molecular beam epitaxy and improvement of crystal quality by migration enhanced epitaxy, PHYS ST S-A, 176(1), 1999, pp. 323-328
Risultati: 1-8 |